Synthesis, characterization of WS2 nanostructures by vapor phase deposition
Ultrathin two-dimensional WS2 nanostructures with various morphologies have been prepared on SiO2/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as...
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| Veröffentlicht in: | Journal of applied physics 2015-02, Vol.117 (6) |
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| container_title | Journal of applied physics |
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| creator | Fan, Yinping Li, Jun Hao, Guolin Luo, Siwei Tang, Chao Zhong, Jianxin |
| description | Ultrathin two-dimensional WS2 nanostructures with various morphologies have been prepared on SiO2/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as-prepared products were systematically characterized by employing atomic force microscopy, Raman spectroscopy as well as scanning electron spectroscopy. The electrostatic properties of WS2 nanostructures were investigated exhibiting uniform surface potential and charge distributions. We have also detected the photoluminescence properties of WS2 nanostructures, which are dependent on the thickness and nanostructures of synthesized WS2. These results suggest that the optoelectronic properties of WS2 nanostructures can be effectively tuned by quantum confinement effect and nanostructures. |
| doi_str_mv | 10.1063/1.4907688 |
| format | Article |
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Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as-prepared products were systematically characterized by employing atomic force microscopy, Raman spectroscopy as well as scanning electron spectroscopy. The electrostatic properties of WS2 nanostructures were investigated exhibiting uniform surface potential and charge distributions. We have also detected the photoluminescence properties of WS2 nanostructures, which are dependent on the thickness and nanostructures of synthesized WS2. These results suggest that the optoelectronic properties of WS2 nanostructures can be effectively tuned by quantum confinement effect and nanostructures.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4907688</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Atomic force microscopy ; Charge distribution ; Deposition ; Morphology ; Nanostructure ; Optoelectronics ; Photoluminescence ; Properties (attributes) ; Quantum confinement ; Raman spectroscopy ; Sapphire ; Silicon dioxide ; Silicon substrates ; Spectrum analysis ; Thickness ; Tungsten disulfide ; Vapor phases</subject><ispartof>Journal of applied physics, 2015-02, Vol.117 (6)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-a0b221fe89ac10fe7f66492dfc24e763dd66d795584b15f2ef14d1ed28af7c5f3</citedby><cites>FETCH-LOGICAL-c257t-a0b221fe89ac10fe7f66492dfc24e763dd66d795584b15f2ef14d1ed28af7c5f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Fan, Yinping</creatorcontrib><creatorcontrib>Li, Jun</creatorcontrib><creatorcontrib>Hao, Guolin</creatorcontrib><creatorcontrib>Luo, Siwei</creatorcontrib><creatorcontrib>Tang, Chao</creatorcontrib><creatorcontrib>Zhong, Jianxin</creatorcontrib><title>Synthesis, characterization of WS2 nanostructures by vapor phase deposition</title><title>Journal of applied physics</title><description>Ultrathin two-dimensional WS2 nanostructures with various morphologies have been prepared on SiO2/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as-prepared products were systematically characterized by employing atomic force microscopy, Raman spectroscopy as well as scanning electron spectroscopy. The electrostatic properties of WS2 nanostructures were investigated exhibiting uniform surface potential and charge distributions. We have also detected the photoluminescence properties of WS2 nanostructures, which are dependent on the thickness and nanostructures of synthesized WS2. These results suggest that the optoelectronic properties of WS2 nanostructures can be effectively tuned by quantum confinement effect and nanostructures.</description><subject>Applied physics</subject><subject>Atomic force microscopy</subject><subject>Charge distribution</subject><subject>Deposition</subject><subject>Morphology</subject><subject>Nanostructure</subject><subject>Optoelectronics</subject><subject>Photoluminescence</subject><subject>Properties (attributes)</subject><subject>Quantum confinement</subject><subject>Raman spectroscopy</subject><subject>Sapphire</subject><subject>Silicon dioxide</subject><subject>Silicon substrates</subject><subject>Spectrum analysis</subject><subject>Thickness</subject><subject>Tungsten disulfide</subject><subject>Vapor phases</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkMtKAzEYRoMoWKsL3yDgSnBq_szktpRiVSy4qOIypLnQKToZk4wwPr0t7erbHM4HB6FrIDMgvL6HWaOI4FKeoAkQqSrBGDlFE0IoVFIJdY4uct4SAiBrNUGvq7ErG5_bfIftxiRji0_tnylt7HAM-HNFcWe6mEsabBmSz3g94l_Tx4T7jckeO9_H3O75S3QWzFf2V8edoo_F4_v8uVq-Pb3MH5aVpUyUypA1pRC8VMYCCV4EzhtFXbC08YLXznHuhGJMNmtggfoAjQPvqDRBWBbqKbo5ePsUfwafi97GIXW7S02BNgrEzrKjbg-UTTHn5IPuU_tt0qiB6H0rDfrYqv4HjVpcGg</recordid><startdate>20150214</startdate><enddate>20150214</enddate><creator>Fan, Yinping</creator><creator>Li, Jun</creator><creator>Hao, Guolin</creator><creator>Luo, Siwei</creator><creator>Tang, Chao</creator><creator>Zhong, Jianxin</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150214</creationdate><title>Synthesis, characterization of WS2 nanostructures by vapor phase deposition</title><author>Fan, Yinping ; Li, Jun ; Hao, Guolin ; Luo, Siwei ; Tang, Chao ; Zhong, Jianxin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-a0b221fe89ac10fe7f66492dfc24e763dd66d795584b15f2ef14d1ed28af7c5f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Atomic force microscopy</topic><topic>Charge distribution</topic><topic>Deposition</topic><topic>Morphology</topic><topic>Nanostructure</topic><topic>Optoelectronics</topic><topic>Photoluminescence</topic><topic>Properties (attributes)</topic><topic>Quantum confinement</topic><topic>Raman spectroscopy</topic><topic>Sapphire</topic><topic>Silicon dioxide</topic><topic>Silicon substrates</topic><topic>Spectrum analysis</topic><topic>Thickness</topic><topic>Tungsten disulfide</topic><topic>Vapor phases</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fan, Yinping</creatorcontrib><creatorcontrib>Li, Jun</creatorcontrib><creatorcontrib>Hao, Guolin</creatorcontrib><creatorcontrib>Luo, Siwei</creatorcontrib><creatorcontrib>Tang, Chao</creatorcontrib><creatorcontrib>Zhong, Jianxin</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fan, Yinping</au><au>Li, Jun</au><au>Hao, Guolin</au><au>Luo, Siwei</au><au>Tang, Chao</au><au>Zhong, Jianxin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis, characterization of WS2 nanostructures by vapor phase deposition</atitle><jtitle>Journal of applied physics</jtitle><date>2015-02-14</date><risdate>2015</risdate><volume>117</volume><issue>6</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Ultrathin two-dimensional WS2 nanostructures with various morphologies have been prepared on SiO2/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as-prepared products were systematically characterized by employing atomic force microscopy, Raman spectroscopy as well as scanning electron spectroscopy. The electrostatic properties of WS2 nanostructures were investigated exhibiting uniform surface potential and charge distributions. We have also detected the photoluminescence properties of WS2 nanostructures, which are dependent on the thickness and nanostructures of synthesized WS2. These results suggest that the optoelectronic properties of WS2 nanostructures can be effectively tuned by quantum confinement effect and nanostructures.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4907688</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Atomic force microscopy Charge distribution Deposition Morphology Nanostructure Optoelectronics Photoluminescence Properties (attributes) Quantum confinement Raman spectroscopy Sapphire Silicon dioxide Silicon substrates Spectrum analysis Thickness Tungsten disulfide Vapor phases |
| title | Synthesis, characterization of WS2 nanostructures by vapor phase deposition |
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