High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreas...

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Veröffentlicht in:Journal of applied physics 2015-02, Vol.117 (6)
Hauptverfasser: Jiang, C., Rumyantsev, S. L., Samnakay, R., Shur, M. S., Balandin, A. A.
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container_issue 6
container_start_page
container_title Journal of applied physics
container_volume 117
creator Jiang, C.
Rumyantsev, S. L.
Samnakay, R.
Shur, M. S.
Balandin, A. A.
description We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.
doi_str_mv 10.1063/1.4906496
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L. ; Samnakay, R. ; Shur, M. S. ; Balandin, A. A.</creator><creatorcontrib>Jiang, C. ; Rumyantsev, S. L. ; Samnakay, R. ; Shur, M. S. ; Balandin, A. A.</creatorcontrib><description>We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. 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subjects Applied physics
Current voltage characteristics
Direct current
Graphene
Molybdenum disulfide
Ohmic dissipation
Resistance heating
Semiconductor devices
Thermal stability
Thin film transistors
Threshold voltage
Transistors
title High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics
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