High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics
We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreas...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2015-02, Vol.117 (6) |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 6 |
container_start_page | |
container_title | Journal of applied physics |
container_volume | 117 |
creator | Jiang, C. Rumyantsev, S. L. Samnakay, R. Shur, M. S. Balandin, A. A. |
description | We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors. |
doi_str_mv | 10.1063/1.4906496 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2124911859</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124911859</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-b1ff829142ca80f4f70fc7f60f95c02f3c58ccb5a5bee2c4f4889f7dd38771da3</originalsourceid><addsrcrecordid>eNo1kE1LAzEQhoMoWKsH_0HAk4fUfOxH4k1qtULFg3pe0mym3dLdrJOs4L93pfU0My_PzMBDyLXgM8ELdSdmmeFFZooTMhFcG1bmOT8lE86lYNqU5pxcxLjjXAitzISkZbPZsuTb3qNNA3o6NhCwtZ3zNAB9De-Spm3TMWj2LU1ou9jEFDDe08cGvUvUDYi-S9R2Ne2HffT_CfsO-2Q347y1aF3yOG42Ll6SM7Ajd3WsU_L5tPiYL9nq7fll_rBiTkmV2FoAaGlEJp3VHDIoObgSCg4md1yCcrl2bp3bfO29dBlkWhso61rpshS1VVNyc7jbY_gafEzVLgzYjS8rKWRmRge5GanbA-UwxIgeqh6b1uJPJXj1J7US1VGq-gVK6Wu9</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124911859</pqid></control><display><type>article</type><title>High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Jiang, C. ; Rumyantsev, S. L. ; Samnakay, R. ; Shur, M. S. ; Balandin, A. A.</creator><creatorcontrib>Jiang, C. ; Rumyantsev, S. L. ; Samnakay, R. ; Shur, M. S. ; Balandin, A. A.</creatorcontrib><description>We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4906496</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Current voltage characteristics ; Direct current ; Graphene ; Molybdenum disulfide ; Ohmic dissipation ; Resistance heating ; Semiconductor devices ; Thermal stability ; Thin film transistors ; Threshold voltage ; Transistors</subject><ispartof>Journal of applied physics, 2015-02, Vol.117 (6)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-b1ff829142ca80f4f70fc7f60f95c02f3c58ccb5a5bee2c4f4889f7dd38771da3</citedby><cites>FETCH-LOGICAL-c323t-b1ff829142ca80f4f70fc7f60f95c02f3c58ccb5a5bee2c4f4889f7dd38771da3</cites><orcidid>0000-0003-3999-3743 ; 0000-0003-0976-6232</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Jiang, C.</creatorcontrib><creatorcontrib>Rumyantsev, S. L.</creatorcontrib><creatorcontrib>Samnakay, R.</creatorcontrib><creatorcontrib>Shur, M. S.</creatorcontrib><creatorcontrib>Balandin, A. A.</creatorcontrib><title>High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics</title><title>Journal of applied physics</title><description>We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.</description><subject>Applied physics</subject><subject>Current voltage characteristics</subject><subject>Direct current</subject><subject>Graphene</subject><subject>Molybdenum disulfide</subject><subject>Ohmic dissipation</subject><subject>Resistance heating</subject><subject>Semiconductor devices</subject><subject>Thermal stability</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo1kE1LAzEQhoMoWKsH_0HAk4fUfOxH4k1qtULFg3pe0mym3dLdrJOs4L93pfU0My_PzMBDyLXgM8ELdSdmmeFFZooTMhFcG1bmOT8lE86lYNqU5pxcxLjjXAitzISkZbPZsuTb3qNNA3o6NhCwtZ3zNAB9De-Spm3TMWj2LU1ou9jEFDDe08cGvUvUDYi-S9R2Ne2HffT_CfsO-2Q347y1aF3yOG42Ll6SM7Ajd3WsU_L5tPiYL9nq7fll_rBiTkmV2FoAaGlEJp3VHDIoObgSCg4md1yCcrl2bp3bfO29dBlkWhso61rpshS1VVNyc7jbY_gafEzVLgzYjS8rKWRmRge5GanbA-UwxIgeqh6b1uJPJXj1J7US1VGq-gVK6Wu9</recordid><startdate>20150214</startdate><enddate>20150214</enddate><creator>Jiang, C.</creator><creator>Rumyantsev, S. L.</creator><creator>Samnakay, R.</creator><creator>Shur, M. S.</creator><creator>Balandin, A. A.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3999-3743</orcidid><orcidid>https://orcid.org/0000-0003-0976-6232</orcidid></search><sort><creationdate>20150214</creationdate><title>High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics</title><author>Jiang, C. ; Rumyantsev, S. L. ; Samnakay, R. ; Shur, M. S. ; Balandin, A. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-b1ff829142ca80f4f70fc7f60f95c02f3c58ccb5a5bee2c4f4889f7dd38771da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Current voltage characteristics</topic><topic>Direct current</topic><topic>Graphene</topic><topic>Molybdenum disulfide</topic><topic>Ohmic dissipation</topic><topic>Resistance heating</topic><topic>Semiconductor devices</topic><topic>Thermal stability</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jiang, C.</creatorcontrib><creatorcontrib>Rumyantsev, S. L.</creatorcontrib><creatorcontrib>Samnakay, R.</creatorcontrib><creatorcontrib>Shur, M. S.</creatorcontrib><creatorcontrib>Balandin, A. A.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jiang, C.</au><au>Rumyantsev, S. L.</au><au>Samnakay, R.</au><au>Shur, M. S.</au><au>Balandin, A. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics</atitle><jtitle>Journal of applied physics</jtitle><date>2015-02-14</date><risdate>2015</risdate><volume>117</volume><issue>6</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4906496</doi><orcidid>https://orcid.org/0000-0003-3999-3743</orcidid><orcidid>https://orcid.org/0000-0003-0976-6232</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 2015-02, Vol.117 (6) |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_proquest_journals_2124911859 |
source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Applied physics Current voltage characteristics Direct current Graphene Molybdenum disulfide Ohmic dissipation Resistance heating Semiconductor devices Thermal stability Thin film transistors Threshold voltage Transistors |
title | High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T19%3A20%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-temperature%20performance%20of%20MoS2%20thin-film%20transistors:%20Direct%20current%20and%20pulse%20current-voltage%20characteristics&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Jiang,%20C.&rft.date=2015-02-14&rft.volume=117&rft.issue=6&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4906496&rft_dat=%3Cproquest_cross%3E2124911859%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2124911859&rft_id=info:pmid/&rfr_iscdi=true |