Limits on the bolometric response of graphene due to flicker noise
We study the photoresponse of graphene field effect transistors using scanning photocurrent microscopy in near and far field configurations, and we find that the response of graphene under a source–drain bias voltage away from the contacts is dominated by the bolometric effect caused by laser induce...
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Veröffentlicht in: | Applied physics letters 2015-02, Vol.106 (5) |
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Format: | Artikel |
Sprache: | eng |
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