Robustness of n-GaAs carrier spin properties to 5 MeV protonirradiation
Modern electronic devices utilize charge to transmit and store information. This leaves the informationsusceptible to external influences, such as radiation, that can introduce short timescalechargefluctuations and, long term, degrade electronic properties. Encoding information as spinpolarizationso...
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| Veröffentlicht in: | Applied physics letters 2015-02, Vol.106 (7) |
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| creator | Pursley, Brennan C Song, X Torres-Isea, R O Bokari, E A Kayani, A |
| description | Modern electronic devices utilize charge to transmit and store information. This leaves the informationsusceptible to external influences, such as radiation, that can introduce short timescalechargefluctuations and, long term, degrade electronic properties. Encoding information as spinpolarizationsoffers an attractive alternative to electronic logic that should be robust to randomlypolarized transient radiation effects. As a preliminary step towards radiation-resistantspintronicdevices, we measure the spin properties of n-GaAs as a function of radiationfluence using time-resolved Kerr rotation and photoluminescence spectroscopy. Our results show a modestto negligible change in the long-term electron spin properties up to a fluence of1 × 1014 (5 MeV protons)/cm2, even as the luminescence decreasesby two orders of magnitude. |
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This leaves the informationsusceptible to external influences, such as radiation, that can introduce short timescalechargefluctuations and, long term, degrade electronic properties. Encoding information as spinpolarizationsoffers an attractive alternative to electronic logic that should be robust to randomlypolarized transient radiation effects. As a preliminary step towards radiation-resistantspintronicdevices, we measure the spin properties of n-GaAs as a function of radiationfluence using time-resolved Kerr rotation and photoluminescence spectroscopy. Our results show a modestto negligible change in the long-term electron spin properties up to a fluence of1 × 1014 (5 MeV protons)/cm2, even as the luminescence decreasesby two orders of magnitude.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electron spin ; Electronic devices ; Electrons ; Photoluminescence ; Properties (attributes) ; Radiation effects</subject><ispartof>Applied physics letters, 2015-02, Vol.106 (7)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Pursley, Brennan C</creatorcontrib><creatorcontrib>Song, X</creatorcontrib><creatorcontrib>Torres-Isea, R O</creatorcontrib><creatorcontrib>Bokari, E A</creatorcontrib><creatorcontrib>Kayani, A</creatorcontrib><title>Robustness of n-GaAs carrier spin properties to 5 MeV protonirradiation</title><title>Applied physics letters</title><description>Modern electronic devices utilize charge to transmit and store information. 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Our results show a modestto negligible change in the long-term electron spin properties up to a fluence of1 × 1014 (5 MeV protons)/cm2, even as the luminescence decreasesby two orders of magnitude.</description><subject>Applied physics</subject><subject>Electron spin</subject><subject>Electronic devices</subject><subject>Electrons</subject><subject>Photoluminescence</subject><subject>Properties (attributes)</subject><subject>Radiation effects</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqNiksKwjAURYMoWD97CDgOJE1j7VDE38CJiNMS9RVSJKnvpXOnbtOVWMEFODrcc0-PJUrmudBKLfoskVJqMS-MGrIRUd1Nk2qdsP0xXFqKHoh4qLgXW7skfrWIDpBT4zxvMDSA0QHxGLh5P18HOH9tDN4h2puz0QU_YYPK3gmmP47ZbLM-rXaiKx8tUCzr0KLvrjJVaVZIk2Va_1d9ANXAPnk</recordid><startdate>20150216</startdate><enddate>20150216</enddate><creator>Pursley, Brennan C</creator><creator>Song, X</creator><creator>Torres-Isea, R O</creator><creator>Bokari, E A</creator><creator>Kayani, A</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150216</creationdate><title>Robustness of n-GaAs carrier spin properties to 5 MeV protonirradiation</title><author>Pursley, Brennan C ; Song, X ; Torres-Isea, R O ; Bokari, E A ; Kayani, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_21249054433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Electron spin</topic><topic>Electronic devices</topic><topic>Electrons</topic><topic>Photoluminescence</topic><topic>Properties (attributes)</topic><topic>Radiation effects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pursley, Brennan C</creatorcontrib><creatorcontrib>Song, X</creatorcontrib><creatorcontrib>Torres-Isea, R O</creatorcontrib><creatorcontrib>Bokari, E A</creatorcontrib><creatorcontrib>Kayani, A</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pursley, Brennan C</au><au>Song, X</au><au>Torres-Isea, R O</au><au>Bokari, E A</au><au>Kayani, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Robustness of n-GaAs carrier spin properties to 5 MeV protonirradiation</atitle><jtitle>Applied physics letters</jtitle><date>2015-02-16</date><risdate>2015</risdate><volume>106</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Modern electronic devices utilize charge to transmit and store information. This leaves the informationsusceptible to external influences, such as radiation, that can introduce short timescalechargefluctuations and, long term, degrade electronic properties. Encoding information as spinpolarizationsoffers an attractive alternative to electronic logic that should be robust to randomlypolarized transient radiation effects. As a preliminary step towards radiation-resistantspintronicdevices, we measure the spin properties of n-GaAs as a function of radiationfluence using time-resolved Kerr rotation and photoluminescence spectroscopy. Our results show a modestto negligible change in the long-term electron spin properties up to a fluence of1 × 1014 (5 MeV protons)/cm2, even as the luminescence decreasesby two orders of magnitude.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub></addata></record> |
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| ispartof | Applied physics letters, 2015-02, Vol.106 (7) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Electron spin Electronic devices Electrons Photoluminescence Properties (attributes) Radiation effects |
| title | Robustness of n-GaAs carrier spin properties to 5 MeV protonirradiation |
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