Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device
The characteristics of Pr0.7Ca0.3MnO3 (PCMO)-based resistive change memory were evaluated as a synapse device for a emerging computing system inspired by a biological brain. The evaluated samples structured with various reactive top electrodes exhibited a dependence on the metal-oxide free energy. M...
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| Veröffentlicht in: | Applied physics letters 2015-03, Vol.106 (11) |
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| container_title | Applied physics letters |
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| creator | Lee, Daeseok Moon, Kibong Park, Jaesung Park, Sangsu Hwang, Hyunsang |
| description | The characteristics of Pr0.7Ca0.3MnO3 (PCMO)-based resistive change memory were evaluated as a synapse device for a emerging computing system inspired by a biological brain. The evaluated samples structured with various reactive top electrodes exhibited a dependence on the metal-oxide free energy. More conductance states which can improve the performance of the brain-inspired computing system were achieved in a sample having a low metal-oxide free energy. During the increase and decrease in the conductance, the low metal-oxide free energy also resulted in an asymmetric conductance change leading to degradation in the computational accuracy of the brain-inspired computing system. The results demonstrated a trade-off between the number of conductance states and the variation in the conductance change in the PCMO-based synapse device. |
| doi_str_mv | 10.1063/1.4915924 |
| format | Article |
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The evaluated samples structured with various reactive top electrodes exhibited a dependence on the metal-oxide free energy. More conductance states which can improve the performance of the brain-inspired computing system were achieved in a sample having a low metal-oxide free energy. During the increase and decrease in the conductance, the low metal-oxide free energy also resulted in an asymmetric conductance change leading to degradation in the computational accuracy of the brain-inspired computing system. The results demonstrated a trade-off between the number of conductance states and the variation in the conductance change in the PCMO-based synapse device.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4915924</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Brain ; Computation ; Computer memory ; Dependence ; Free energy ; Metal oxides ; Performance enhancement ; Resistance ; Tradeoffs</subject><ispartof>Applied physics letters, 2015-03, Vol.106 (11)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-a2696403a3186e21c2ae714fc058a9135f9e5801b740a6aae8afcd01325d44153</citedby><cites>FETCH-LOGICAL-c292t-a2696403a3186e21c2ae714fc058a9135f9e5801b740a6aae8afcd01325d44153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Lee, Daeseok</creatorcontrib><creatorcontrib>Moon, Kibong</creatorcontrib><creatorcontrib>Park, Jaesung</creatorcontrib><creatorcontrib>Park, Sangsu</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><title>Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device</title><title>Applied physics letters</title><description>The characteristics of Pr0.7Ca0.3MnO3 (PCMO)-based resistive change memory were evaluated as a synapse device for a emerging computing system inspired by a biological brain. 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The results demonstrated a trade-off between the number of conductance states and the variation in the conductance change in the PCMO-based synapse device.</description><subject>Applied physics</subject><subject>Brain</subject><subject>Computation</subject><subject>Computer memory</subject><subject>Dependence</subject><subject>Free energy</subject><subject>Metal oxides</subject><subject>Performance enhancement</subject><subject>Resistance</subject><subject>Tradeoffs</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpdkEtLw0AUhQdRsFYX_oMBVy5S584ryVKKL6jURV2Hm8kdTWkndSapFP-8lXbl6nDg4xz4GLsGMQFh1R1MdAmmlPqEjUDkeaYAilM2EkKozJYGztlFSst9NVKpEftZRGwo67znNfXfRIGHYV1T5J3nrgvN4HoMjnjqsafEMTR8i7HFul21_e4_5T4xfBBvA3-LYpJPUUzUa5irrMZEDU-7gJtEvKFt6-iSnXlcJbo65pi9Pz4sps_ZbP70Mr2fZU6Wss9Q2tJqoVBBYUmCk0g5aO-EKbAEZXxJphBQ51qgRaQCvWsEKGkarcGoMbs57G5i9zVQ6qtlN8Swv6wkSF3kVlu1p24PlItdSpF8tYntGuOuAlH9ua2gOrpVv_Q7am0</recordid><startdate>20150316</startdate><enddate>20150316</enddate><creator>Lee, Daeseok</creator><creator>Moon, Kibong</creator><creator>Park, Jaesung</creator><creator>Park, Sangsu</creator><creator>Hwang, Hyunsang</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150316</creationdate><title>Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device</title><author>Lee, Daeseok ; Moon, Kibong ; Park, Jaesung ; Park, Sangsu ; Hwang, Hyunsang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-a2696403a3186e21c2ae714fc058a9135f9e5801b740a6aae8afcd01325d44153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Brain</topic><topic>Computation</topic><topic>Computer memory</topic><topic>Dependence</topic><topic>Free energy</topic><topic>Metal oxides</topic><topic>Performance enhancement</topic><topic>Resistance</topic><topic>Tradeoffs</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Daeseok</creatorcontrib><creatorcontrib>Moon, Kibong</creatorcontrib><creatorcontrib>Park, Jaesung</creatorcontrib><creatorcontrib>Park, Sangsu</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Daeseok</au><au>Moon, Kibong</au><au>Park, Jaesung</au><au>Park, Sangsu</au><au>Hwang, Hyunsang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device</atitle><jtitle>Applied physics letters</jtitle><date>2015-03-16</date><risdate>2015</risdate><volume>106</volume><issue>11</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The characteristics of Pr0.7Ca0.3MnO3 (PCMO)-based resistive change memory were evaluated as a synapse device for a emerging computing system inspired by a biological brain. 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| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Brain Computation Computer memory Dependence Free energy Metal oxides Performance enhancement Resistance Tradeoffs |
| title | Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device |
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