Anisotropy of electrical and magnetic transport properties of epitaxial SrRuO3 thin films
SrRuO3 (SRO) thin films with different thickness (2–70 nm) have been grown on (001), (110), and (111) SrTiO3 substrates. The (001)-SRO films (2–8 nm) exhibited smooth flat surfaces whereas the (110)- and (111)-SRO films featured a faceted island structure. Room temperature resistivity and residual r...
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Veröffentlicht in: | Journal of applied physics 2015-03, Vol.117 (9) |
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Sprache: | eng |
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Zusammenfassung: | SrRuO3 (SRO) thin films with different thickness (2–70 nm) have been grown on (001), (110), and (111) SrTiO3 substrates. The (001)-SRO films (2–8 nm) exhibited smooth flat surfaces whereas the (110)- and (111)-SRO films featured a faceted island structure. Room temperature resistivity and residual resistivity are the lowest for the (111)-SRO films (30–70 nm). Over all thicknesses, we observed enhanced magnetization in the (111)-SRO films (∼4 μB/Ru) compared with that for the (001)- and (110)-SRO films (∼2 μB/Ru and ∼3 μB/Ru, respectively), suggesting a low-spin state t2g(3↑,1↓), high-spin state t2g(3↑)eg(1↑), and mixed low- and high-spin states for the (001)-, (111)-, and (110)-SRO films, respectively. The dependence of resistivity on temperatures near TC follows a power law with exponent β = 0.312 and β = 0.363 for the (110)- and (111)-SRO films, respectively. These critical exponents are consistent with magnetic data with scaling law M = C (TC − T)β. At low temperatures, dM/dT and dρ/dT show a linear relationship in the temperature range for the Fermi liquid. These results suggest that the intrinsic electrical and magnetic transport properties are coupled. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4914072 |