Low-k material damage during photoresist ashing process

The change of –OH and –CH3 component ratios in Fourier transform-infrared analysis of low-k materials during photoresist (PR) ashing processes were compared to assess the differences in the damages to low-k materials in a reactive ion etch (RIE) chamber and a magnetized-inductively coupled plasma (M...

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Veröffentlicht in:	Journal of applied physics 2015-05, Vol.117 (17)
Hauptverfasser:	Lee, Woohyun, Kim, Hyuk, Park, Wanjae, Kim, Wan-Soo, Kim, Donghyun, Kim, Ji-Won, Cheong, Hee-Woon, Whang, Ki-Woong
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Damage assessment Energy measurement Fourier transforms Inductively coupled plasma Infrared analysis Ion energy distribution Ion flux Photoresists
Online-Zugang:	Volltext
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