Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
The valence band order of AlxGa 1−x N is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (112¯2) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted dielectric functions are obtained by spectroscopic ellipsometry and corresponding inter-band tra...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2015-05, Vol.106 (18) |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 18 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 106 |
| creator | Feneberg, Martin Winkler, Michael Klamser, Juliane Stellmach, Joachim Frentrup, Martin Ploch, Simon Mehnke, Frank Wernicke, Tim Kneissl, Michael Goldhahn, Rüdiger |
| description | The valence band order of AlxGa 1−x N is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (112¯2) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted dielectric functions are obtained by spectroscopic ellipsometry and corresponding inter-band transition energies are extracted. The known strain situation of the sample layers is used to correct for the small strain-induced energy shifts within k · p perturbation theory. It also is used to identify transitions related to the three valence bands. Transitions with E ⊥ c from the Γ9 valence band verify an inter-band bowing parameter of b=0.9 eV. The transitions with E || c allow determining the crystal field splitting energy which can be described by a linear interpolation between the values for GaN and AlN satisfactorily. |
| doi_str_mv | 10.1063/1.4920985 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2124776533</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124776533</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-987192d3c1e34e0c02f4340d29aa178d00a7747d1d627a8ac4be2777d0dd8c763</originalsourceid><addsrcrecordid>eNotkE9LAzEUxIMoWKsHv0HAk4eteXnZfbvHUvwHRUH0HGKS1S3bTUy2SL-9K-1pGPgxMwxj1yAWICq8g4VqpGjq8oTNQBAVCFCfspkQAouqKeGcXeS8mWwpEWfsbTl0OYwpxM7yEMfOmp7Hyfo0dj7z0PLst10MvUl82T-aF96bvU-Zf6XwO_Aw8G0RezN4nk2M313yl-ysNX32V0eds4-H-_fVU7F-fXxeLdeFRYlj0dQEjXRowaPywgrZKlTCycYYoNoJYYgUOXCVJFMbqz69JCInnKstVThnN4fcae7PzudRb8IuDVOlliAVUVUiTtTtgbIp5Jx8q2PqtibtNQj9f5kGfbwM_wCjqF0h</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124776533</pqid></control><display><type>article</type><title>Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Feneberg, Martin ; Winkler, Michael ; Klamser, Juliane ; Stellmach, Joachim ; Frentrup, Martin ; Ploch, Simon ; Mehnke, Frank ; Wernicke, Tim ; Kneissl, Michael ; Goldhahn, Rüdiger</creator><creatorcontrib>Feneberg, Martin ; Winkler, Michael ; Klamser, Juliane ; Stellmach, Joachim ; Frentrup, Martin ; Ploch, Simon ; Mehnke, Frank ; Wernicke, Tim ; Kneissl, Michael ; Goldhahn, Rüdiger</creatorcontrib><description>The valence band order of AlxGa 1−x N is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (112¯2) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted dielectric functions are obtained by spectroscopic ellipsometry and corresponding inter-band transition energies are extracted. The known strain situation of the sample layers is used to correct for the small strain-induced energy shifts within k · p perturbation theory. It also is used to identify transitions related to the three valence bands. Transitions with E ⊥ c from the Γ9 valence band verify an inter-band bowing parameter of b=0.9 eV. The transitions with E || c allow determining the crystal field splitting energy which can be described by a linear interpolation between the values for GaN and AlN satisfactorily.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4920985</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Aluminum oxide ; Anisotropy ; Applied physics ; Bowing ; Interpolation ; Optical properties ; Perturbation theory ; Sapphire ; Spectroellipsometry ; Thin films ; Valence band</subject><ispartof>Applied physics letters, 2015-05, Vol.106 (18)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-987192d3c1e34e0c02f4340d29aa178d00a7747d1d627a8ac4be2777d0dd8c763</citedby><cites>FETCH-LOGICAL-c323t-987192d3c1e34e0c02f4340d29aa178d00a7747d1d627a8ac4be2777d0dd8c763</cites><orcidid>0000-0001-8296-2331 ; 0000-0003-4253-0061</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Feneberg, Martin</creatorcontrib><creatorcontrib>Winkler, Michael</creatorcontrib><creatorcontrib>Klamser, Juliane</creatorcontrib><creatorcontrib>Stellmach, Joachim</creatorcontrib><creatorcontrib>Frentrup, Martin</creatorcontrib><creatorcontrib>Ploch, Simon</creatorcontrib><creatorcontrib>Mehnke, Frank</creatorcontrib><creatorcontrib>Wernicke, Tim</creatorcontrib><creatorcontrib>Kneissl, Michael</creatorcontrib><creatorcontrib>Goldhahn, Rüdiger</creatorcontrib><title>Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire</title><title>Applied physics letters</title><description>The valence band order of AlxGa 1−x N is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (112¯2) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted dielectric functions are obtained by spectroscopic ellipsometry and corresponding inter-band transition energies are extracted. The known strain situation of the sample layers is used to correct for the small strain-induced energy shifts within k · p perturbation theory. It also is used to identify transitions related to the three valence bands. Transitions with E ⊥ c from the Γ9 valence band verify an inter-band bowing parameter of b=0.9 eV. The transitions with E || c allow determining the crystal field splitting energy which can be described by a linear interpolation between the values for GaN and AlN satisfactorily.</description><subject>Aluminum gallium nitrides</subject><subject>Aluminum oxide</subject><subject>Anisotropy</subject><subject>Applied physics</subject><subject>Bowing</subject><subject>Interpolation</subject><subject>Optical properties</subject><subject>Perturbation theory</subject><subject>Sapphire</subject><subject>Spectroellipsometry</subject><subject>Thin films</subject><subject>Valence band</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkE9LAzEUxIMoWKsHv0HAk4eteXnZfbvHUvwHRUH0HGKS1S3bTUy2SL-9K-1pGPgxMwxj1yAWICq8g4VqpGjq8oTNQBAVCFCfspkQAouqKeGcXeS8mWwpEWfsbTl0OYwpxM7yEMfOmp7Hyfo0dj7z0PLst10MvUl82T-aF96bvU-Zf6XwO_Aw8G0RezN4nk2M313yl-ysNX32V0eds4-H-_fVU7F-fXxeLdeFRYlj0dQEjXRowaPywgrZKlTCycYYoNoJYYgUOXCVJFMbqz69JCInnKstVThnN4fcae7PzudRb8IuDVOlliAVUVUiTtTtgbIp5Jx8q2PqtibtNQj9f5kGfbwM_wCjqF0h</recordid><startdate>20150504</startdate><enddate>20150504</enddate><creator>Feneberg, Martin</creator><creator>Winkler, Michael</creator><creator>Klamser, Juliane</creator><creator>Stellmach, Joachim</creator><creator>Frentrup, Martin</creator><creator>Ploch, Simon</creator><creator>Mehnke, Frank</creator><creator>Wernicke, Tim</creator><creator>Kneissl, Michael</creator><creator>Goldhahn, Rüdiger</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8296-2331</orcidid><orcidid>https://orcid.org/0000-0003-4253-0061</orcidid></search><sort><creationdate>20150504</creationdate><title>Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire</title><author>Feneberg, Martin ; Winkler, Michael ; Klamser, Juliane ; Stellmach, Joachim ; Frentrup, Martin ; Ploch, Simon ; Mehnke, Frank ; Wernicke, Tim ; Kneissl, Michael ; Goldhahn, Rüdiger</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-987192d3c1e34e0c02f4340d29aa178d00a7747d1d627a8ac4be2777d0dd8c763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum gallium nitrides</topic><topic>Aluminum oxide</topic><topic>Anisotropy</topic><topic>Applied physics</topic><topic>Bowing</topic><topic>Interpolation</topic><topic>Optical properties</topic><topic>Perturbation theory</topic><topic>Sapphire</topic><topic>Spectroellipsometry</topic><topic>Thin films</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feneberg, Martin</creatorcontrib><creatorcontrib>Winkler, Michael</creatorcontrib><creatorcontrib>Klamser, Juliane</creatorcontrib><creatorcontrib>Stellmach, Joachim</creatorcontrib><creatorcontrib>Frentrup, Martin</creatorcontrib><creatorcontrib>Ploch, Simon</creatorcontrib><creatorcontrib>Mehnke, Frank</creatorcontrib><creatorcontrib>Wernicke, Tim</creatorcontrib><creatorcontrib>Kneissl, Michael</creatorcontrib><creatorcontrib>Goldhahn, Rüdiger</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Feneberg, Martin</au><au>Winkler, Michael</au><au>Klamser, Juliane</au><au>Stellmach, Joachim</au><au>Frentrup, Martin</au><au>Ploch, Simon</au><au>Mehnke, Frank</au><au>Wernicke, Tim</au><au>Kneissl, Michael</au><au>Goldhahn, Rüdiger</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire</atitle><jtitle>Applied physics letters</jtitle><date>2015-05-04</date><risdate>2015</risdate><volume>106</volume><issue>18</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The valence band order of AlxGa 1−x N is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (112¯2) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted dielectric functions are obtained by spectroscopic ellipsometry and corresponding inter-band transition energies are extracted. The known strain situation of the sample layers is used to correct for the small strain-induced energy shifts within k · p perturbation theory. It also is used to identify transitions related to the three valence bands. Transitions with E ⊥ c from the Γ9 valence band verify an inter-band bowing parameter of b=0.9 eV. The transitions with E || c allow determining the crystal field splitting energy which can be described by a linear interpolation between the values for GaN and AlN satisfactorily.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4920985</doi><orcidid>https://orcid.org/0000-0001-8296-2331</orcidid><orcidid>https://orcid.org/0000-0003-4253-0061</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2015-05, Vol.106 (18) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_journals_2124776533 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum gallium nitrides Aluminum oxide Anisotropy Applied physics Bowing Interpolation Optical properties Perturbation theory Sapphire Spectroellipsometry Thin films Valence band |
| title | Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T09%3A05%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Anisotropic%20optical%20properties%20of%20semipolar%20AlGaN%20layers%20grown%20on%20m-plane%20sapphire&rft.jtitle=Applied%20physics%20letters&rft.au=Feneberg,%20Martin&rft.date=2015-05-04&rft.volume=106&rft.issue=18&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4920985&rft_dat=%3Cproquest_cross%3E2124776533%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2124776533&rft_id=info:pmid/&rfr_iscdi=true |