Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors

Carbon nanotubes (CNTs) have been widely studied as a channel material of scaled transistors for high-speed and low-power logic applications. In order to have sufficient drive current, it is widely assumed that CNT-based logic devices will have multiple CNTs in each channel. Understanding the effect...

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Veröffentlicht in:Applied physics letters 2015-06, Vol.106 (24)
Hauptverfasser: Hu, Zhaoying, Tulevski, George S., Hannon, James B., Afzali, Ali, Liehr, Michael, Park, Hongsik
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Sprache:eng
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Zusammenfassung:Carbon nanotubes (CNTs) have been widely studied as a channel material of scaled transistors for high-speed and low-power logic applications. In order to have sufficient drive current, it is widely assumed that CNT-based logic devices will have multiple CNTs in each channel. Understanding the effects of the number of CNTs on device performance can aid in the design of CNT field-effect transistors (CNTFETs). We have fabricated multi-CNT-channel CNTFETs with an 80-nm channel length using precise self-assembly methods. We describe compact statistical models and Monte Carlo simulations to analyze failure probability and the variability of the on-state current and threshold voltage. The results show that multichannel CNTFETs are more resilient to process variation and random environmental fluctuations than single-CNT devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4922770