Arrays of Planar Vacancies in Superior Thermoelectric Ge1−x−yCdxBiyTe with Band Convergence

The multivalence bands in GeTe provide an additional handle to manipulate the thermoelectric performance. Herein, the density‐functional‐theory calculation indicates that Cd doping enables the convergence of these multivalence bands. Plus, the additional Bi dopant serving as the electron donors opti...

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Veröffentlicht in:	Advanced energy materials 2018-10, Vol.8 (30), p.n/a
Hauptverfasser:	Hong, Min, Wang, Yuan, Liu, Weidi, Matsumura, Syo, Wang, Hao, Zou, Jin, Chen, Zhi‐Gang
Format:	Artikel
Sprache:	eng
Schlagworte:	band convergence Carrier density Convergence Crystal defects Free energy GeTe alloys Grain boundaries Heat of formation high‐performance thermoelectrics Lattice vacancies Phonons planar vacancies Point defects TEM characterizations Thermal conductivity Thermoelectric materials
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