Coupling behaviors of graphene/SiO2/Si structure with external electric field

A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the travelin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	AIP advances 2017-02, Vol.7 (2), p.025113-025113-17
Hauptverfasser:	Onishi, Koichi, Kirimoto, Kenta, Sun, Yong
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier mobility Coupling Crystals Current carriers Delay Electric field strength Electric fields Graphene Silicon dioxide Surface acoustic waves Thickness Time lag Wave attenuation
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!