Electrical properties of Si-doped GaN prepared using pulsed sputtering

In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5 × 1016 and 2.0 × 1020 cm−3. For lightly Si-do...

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Veröffentlicht in:	Applied physics letters 2017-01, Vol.110 (4)
Hauptverfasser:	Arakawa, Yasuaki, Ueno, Kohei, Imabeppu, Hideyuki, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Electrical properties Electrode materials Electron mobility Electrons Gallium nitrides Silicon Temperature
Online-Zugang:	Volltext
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