Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
Topological insulators (TI) are a class of materials gaining in importance due to their unique spin/electronic properties, which may allow for the generation of quasiparticles and electronic states which are not accessible in classical condensed-matter systems. Not surprisingly, TI are considered as...
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description | Topological insulators (TI) are a class of materials gaining in importance due to their unique spin/electronic properties, which may allow for the generation of quasiparticles and electronic states which are not accessible in classical condensed-matter systems. Not surprisingly, TI are considered as promising materials for multiple applications in next generation electronic or spintronic devices, as well as for applications in energy conversion, such as thermo-electrics. In this study, we examined the practical challenges associated with the formation of a well-defined junction between a model 3D topological insulator, Bi2Te3, and a metal, Fe or Eu, from which spin injection could potentially be realized. The properties of multilayer systems grown by molecular beam epitaxy (MBE), with Fe or Eu thin films sandwiched between two Bi2Te3 layers, were studied in-situ using electron diffraction and photoelectron spectroscopy. Their magnetic properties were measured using a SQUID magnetometer, while the in-depth chemical structure was assessed using secondary ion mass spectroscopy. An examination of impact of Bi2Te3 structure on chemical stability of the junction area has been realized. For Fe, we found that despite room temperature growth, a reaction between the Fe film and Bi2Te3 takes place, leading to the formation of FeTe and also the precipitation of metallic Bi. For the Eu tri-layer, a reaction also occurs, but the Te chemical state remains intact. |
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Not surprisingly, TI are considered as promising materials for multiple applications in next generation electronic or spintronic devices, as well as for applications in energy conversion, such as thermo-electrics. In this study, we examined the practical challenges associated with the formation of a well-defined junction between a model 3D topological insulator, Bi2Te3, and a metal, Fe or Eu, from which spin injection could potentially be realized. The properties of multilayer systems grown by molecular beam epitaxy (MBE), with Fe or Eu thin films sandwiched between two Bi2Te3 layers, were studied in-situ using electron diffraction and photoelectron spectroscopy. Their magnetic properties were measured using a SQUID magnetometer, while the in-depth chemical structure was assessed using secondary ion mass spectroscopy. An examination of impact of Bi2Te3 structure on chemical stability of the junction area has been realized. For Fe, we found that despite room temperature growth, a reaction between the Fe film and Bi2Te3 takes place, leading to the formation of FeTe and also the precipitation of metallic Bi. 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Not surprisingly, TI are considered as promising materials for multiple applications in next generation electronic or spintronic devices, as well as for applications in energy conversion, such as thermo-electrics. In this study, we examined the practical challenges associated with the formation of a well-defined junction between a model 3D topological insulator, Bi2Te3, and a metal, Fe or Eu, from which spin injection could potentially be realized. The properties of multilayer systems grown by molecular beam epitaxy (MBE), with Fe or Eu thin films sandwiched between two Bi2Te3 layers, were studied in-situ using electron diffraction and photoelectron spectroscopy. Their magnetic properties were measured using a SQUID magnetometer, while the in-depth chemical structure was assessed using secondary ion mass spectroscopy. An examination of impact of Bi2Te3 structure on chemical stability of the junction area has been realized. For Fe, we found that despite room temperature growth, a reaction between the Fe film and Bi2Te3 takes place, leading to the formation of FeTe and also the precipitation of metallic Bi. For the Eu tri-layer, a reaction also occurs, but the Te chemical state remains intact.</description><subject>Bismuth tellurides</subject><subject>Condensed matter physics</subject><subject>Electrical junctions</subject><subject>Electron diffraction</subject><subject>Electron spin</subject><subject>Electron states</subject><subject>Electronic devices</subject><subject>Energy conversion</subject><subject>Epitaxial growth</subject><subject>Iron</subject><subject>Magnetic properties</subject><subject>Molecular beam epitaxy</subject><subject>Multilayers</subject><subject>Organic chemistry</subject><subject>Secondary ion mass spectroscopy</subject><subject>Spectrum analysis</subject><subject>Superconducting quantum interference devices</subject><subject>Thin films</subject><subject>Three dimensional models</subject><subject>Topological insulators</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kc9KxDAQxosoKOrBNwh4UXE1mSZNe1TxHwh60HOYpInbtbtZk1bdm-_gG_okRndRQXAuM_Px4xv4Jsu2GD1gtMgP2QGvZEmpWMrWgIlykAMUy7_m1WwzxhFNxStGS76WPdwMZ7Ex3gztuDHYEpxgm5RIvCPHDdzanLy_vpGdM7tPTvvdr2Whj_qJ6Ro_ieQ--OcJ0TMy9q01fYuBaItjYqdNhy9Jtt3Q1xvZisM22s1FX8_uzk5vTy4GV9fnlydHVwPDoewGhXXAysLlEhxylra6EgV1QCuhtaYCXCVFnSeEaZDO1FWlueCltrUoJOTr2eXct_Y4UtPQjDHMlMdGfQk-3CsMXWNaqyoAIUEWlkHNc0Qs0GgtOWLpTKll8tqee02Df-xt7NTI9yFlFBUw4AJEzliidueUCT7GYN33VUbV52sUU4vXJHZvzkaTwvnM7xt-8uEHVNPa_Qf_df4AIpeb9g</recordid><startdate>201705</startdate><enddate>201705</enddate><creator>Balin, K.</creator><creator>Rapacz, R.</creator><creator>Weis, M.</creator><creator>Szade, J.</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-1811-3033</orcidid></search><sort><creationdate>201705</creationdate><title>Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method</title><author>Balin, K. ; Rapacz, R. ; Weis, M. ; Szade, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-6ef2186f372fa41ef2d9560f2095bbb052f975d386f1b27fcd99b4548bed56723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Bismuth tellurides</topic><topic>Condensed matter physics</topic><topic>Electrical junctions</topic><topic>Electron diffraction</topic><topic>Electron spin</topic><topic>Electron states</topic><topic>Electronic devices</topic><topic>Energy conversion</topic><topic>Epitaxial growth</topic><topic>Iron</topic><topic>Magnetic properties</topic><topic>Molecular beam epitaxy</topic><topic>Multilayers</topic><topic>Organic chemistry</topic><topic>Secondary ion mass spectroscopy</topic><topic>Spectrum analysis</topic><topic>Superconducting quantum interference devices</topic><topic>Thin films</topic><topic>Three dimensional models</topic><topic>Topological insulators</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Balin, K.</creatorcontrib><creatorcontrib>Rapacz, R.</creatorcontrib><creatorcontrib>Weis, M.</creatorcontrib><creatorcontrib>Szade, J.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Balin, K.</au><au>Rapacz, R.</au><au>Weis, M.</au><au>Szade, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method</atitle><jtitle>AIP advances</jtitle><date>2017-05</date><risdate>2017</risdate><volume>7</volume><issue>5</issue><spage>056323</spage><epage>056323-6</epage><pages>056323-056323-6</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Topological insulators (TI) are a class of materials gaining in importance due to their unique spin/electronic properties, which may allow for the generation of quasiparticles and electronic states which are not accessible in classical condensed-matter systems. Not surprisingly, TI are considered as promising materials for multiple applications in next generation electronic or spintronic devices, as well as for applications in energy conversion, such as thermo-electrics. In this study, we examined the practical challenges associated with the formation of a well-defined junction between a model 3D topological insulator, Bi2Te3, and a metal, Fe or Eu, from which spin injection could potentially be realized. The properties of multilayer systems grown by molecular beam epitaxy (MBE), with Fe or Eu thin films sandwiched between two Bi2Te3 layers, were studied in-situ using electron diffraction and photoelectron spectroscopy. Their magnetic properties were measured using a SQUID magnetometer, while the in-depth chemical structure was assessed using secondary ion mass spectroscopy. An examination of impact of Bi2Te3 structure on chemical stability of the junction area has been realized. 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subjects | Bismuth tellurides Condensed matter physics Electrical junctions Electron diffraction Electron spin Electron states Electronic devices Energy conversion Epitaxial growth Iron Magnetic properties Molecular beam epitaxy Multilayers Organic chemistry Secondary ion mass spectroscopy Spectrum analysis Superconducting quantum interference devices Thin films Three dimensional models Topological insulators |
title | Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method |
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