Fabrication of high-quality GaAs-based photodetector arrays on Si

We report on fabrication and characterization of high-quality 32 × 32 GaAs photodetector (PD) arrays on Si substrates fabricated by wafer bonding and epitaxial lift-off (ELO) techniques. Fabricated GaAs PD arrays showed good crystal quality on Si substrates with Raman spectra and X-ray diffraction m...

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Veröffentlicht in:	Applied physics letters 2017-04, Vol.110 (15)
Hauptverfasser:	Kim, SangHyeon, Geum, Dae-Myeong, Park, Min-Su, Kim, Ho-sung, Song, Jin Dong, Choi, Won Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Arrays Dark current Gallium arsenide Optical properties Photometers Raman spectra Scaling Silicon substrates X ray spectra X-ray diffraction
Online-Zugang:	Volltext
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