A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window

In this study, we present a metal/Ba0.6Sr0.4TiO3/SiO2/Si (MBOS) structure for charge trapping memory, where the single Ba0.6Sr0.4TiO3 film acts as the blocking layer and charge trapping layer. This MBOS device structure demonstrates excellent charge trapping characteristics, a large memory window up...

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Veröffentlicht in:	Applied physics letters 2017-05, Vol.110 (22)
Hauptverfasser:	Zhang, Yuanyuan, Yang, Tao, Yan, Xiaobing, Zhang, Zichang, bai, Gang, Lu, Chao, Jia, Xinlei, Ding, Bangfu, Zhao, Jianhui, Zhou, Zhenyu
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Defects Electrons Energy levels Excitation spectra Photoluminescence Silicon dioxide Transmission electron microscopy Trapping Valence band
Online-Zugang:	Volltext
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