A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window
In this study, we present a metal/Ba0.6Sr0.4TiO3/SiO2/Si (MBOS) structure for charge trapping memory, where the single Ba0.6Sr0.4TiO3 film acts as the blocking layer and charge trapping layer. This MBOS device structure demonstrates excellent charge trapping characteristics, a large memory window up...
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| Veröffentlicht in: | Applied physics letters 2017-05, Vol.110 (22) |
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| container_title | Applied physics letters |
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| creator | Zhang, Yuanyuan Yang, Tao Yan, Xiaobing Zhang, Zichang bai, Gang Lu, Chao Jia, Xinlei Ding, Bangfu Zhao, Jianhui Zhou, Zhenyu |
| description | In this study, we present a metal/Ba0.6Sr0.4TiO3/SiO2/Si (MBOS) structure for charge trapping memory, where the single Ba0.6Sr0.4TiO3 film acts as the blocking layer and charge trapping layer. This MBOS device structure demonstrates excellent charge trapping characteristics, a large memory window up to 8.4 V under an applied voltage of ±12 V, robust charge retention of only 4% charge loss after 1.08 × 104 s, fast switching rate, and great program/erase endurance. These attractive features are attributed to the high density of defect states in the Ba0.6Sr0.4TiO3 film and its inter-diffusion interface with SiO2. The properties of defect states in the Ba0.6Sr0.4TiO3 film are investigated through measurements of photoluminescence and photoluminescence excitation spectroscopy. The energy levels of these defect states are found to be distributed between 2.66 eV and 4.05 eV above the valence band. The inter-diffusion at the Ba0.6Sr0.4TiO3/SiO2 interface is observed by high-resolution transmission electron microscopy. More defect sites were created to obtain a better charge trapping capability and retention characteristics. |
| doi_str_mv | 10.1063/1.4984220 |
| format | Article |
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This MBOS device structure demonstrates excellent charge trapping characteristics, a large memory window up to 8.4 V under an applied voltage of ±12 V, robust charge retention of only 4% charge loss after 1.08 × 104 s, fast switching rate, and great program/erase endurance. These attractive features are attributed to the high density of defect states in the Ba0.6Sr0.4TiO3 film and its inter-diffusion interface with SiO2. The properties of defect states in the Ba0.6Sr0.4TiO3 film are investigated through measurements of photoluminescence and photoluminescence excitation spectroscopy. The energy levels of these defect states are found to be distributed between 2.66 eV and 4.05 eV above the valence band. The inter-diffusion at the Ba0.6Sr0.4TiO3/SiO2 interface is observed by high-resolution transmission electron microscopy. More defect sites were created to obtain a better charge trapping capability and retention characteristics.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4984220</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Defects ; Electrons ; Energy levels ; Excitation spectra ; Photoluminescence ; Silicon dioxide ; Transmission electron microscopy ; Trapping ; Valence band</subject><ispartof>Applied physics letters, 2017-05, Vol.110 (22)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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This MBOS device structure demonstrates excellent charge trapping characteristics, a large memory window up to 8.4 V under an applied voltage of ±12 V, robust charge retention of only 4% charge loss after 1.08 × 104 s, fast switching rate, and great program/erase endurance. These attractive features are attributed to the high density of defect states in the Ba0.6Sr0.4TiO3 film and its inter-diffusion interface with SiO2. The properties of defect states in the Ba0.6Sr0.4TiO3 film are investigated through measurements of photoluminescence and photoluminescence excitation spectroscopy. The energy levels of these defect states are found to be distributed between 2.66 eV and 4.05 eV above the valence band. The inter-diffusion at the Ba0.6Sr0.4TiO3/SiO2 interface is observed by high-resolution transmission electron microscopy. More defect sites were created to obtain a better charge trapping capability and retention characteristics.</description><subject>Applied physics</subject><subject>Defects</subject><subject>Electrons</subject><subject>Energy levels</subject><subject>Excitation spectra</subject><subject>Photoluminescence</subject><subject>Silicon dioxide</subject><subject>Transmission electron microscopy</subject><subject>Trapping</subject><subject>Valence band</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp90E1LwzAYB_AgCs7pwW8Q8KTQLm9tmuMcvoGww-Y5pGk6M9qmJt3Gvr3RDT0IXpI8eX78H3gAuMYoxSinE5wyUTBC0AkYYcR5QjEuTsEIIUSTXGT4HFyEsI5lRigdgfUUtmZQzeReoTRfeJSypZ3TycLOSTxgsN2qMbC2TQsrs7U6vp2H-l35lYGDV30fRcxond_Dwe2UrwJUsPnuH793tqvc7hKc1aoJ5up4j8Hb48Ny9py8zp9eZtPXRFPCh4RxpriiSOVlybFQdaGKUpsMMV0bTZBAVV6pXBS6rIUWFaJFkQutRFnpkjBBx-DmkNt797ExYZBrt_FdHCkJJoyJjOc8qtuD0t6F4E0te29b5fcSI_m1SonlcZXR3h1s0HZQg3XdD946_wtlX9X_4b_Jn9G6gS4</recordid><startdate>20170529</startdate><enddate>20170529</enddate><creator>Zhang, Yuanyuan</creator><creator>Yang, Tao</creator><creator>Yan, Xiaobing</creator><creator>Zhang, Zichang</creator><creator>bai, Gang</creator><creator>Lu, Chao</creator><creator>Jia, Xinlei</creator><creator>Ding, Bangfu</creator><creator>Zhao, Jianhui</creator><creator>Zhou, Zhenyu</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20170529</creationdate><title>A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window</title><author>Zhang, Yuanyuan ; Yang, Tao ; Yan, Xiaobing ; Zhang, Zichang ; bai, Gang ; Lu, Chao ; Jia, Xinlei ; Ding, Bangfu ; Zhao, Jianhui ; Zhou, Zhenyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-474a7a30a6bb719af8a8bce504cfec2090d6da698cbf9c9d038869ca9bdcb2493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Defects</topic><topic>Electrons</topic><topic>Energy levels</topic><topic>Excitation spectra</topic><topic>Photoluminescence</topic><topic>Silicon dioxide</topic><topic>Transmission electron microscopy</topic><topic>Trapping</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Yuanyuan</creatorcontrib><creatorcontrib>Yang, Tao</creatorcontrib><creatorcontrib>Yan, Xiaobing</creatorcontrib><creatorcontrib>Zhang, Zichang</creatorcontrib><creatorcontrib>bai, Gang</creatorcontrib><creatorcontrib>Lu, Chao</creatorcontrib><creatorcontrib>Jia, Xinlei</creatorcontrib><creatorcontrib>Ding, Bangfu</creatorcontrib><creatorcontrib>Zhao, Jianhui</creatorcontrib><creatorcontrib>Zhou, Zhenyu</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Yuanyuan</au><au>Yang, Tao</au><au>Yan, Xiaobing</au><au>Zhang, Zichang</au><au>bai, Gang</au><au>Lu, Chao</au><au>Jia, Xinlei</au><au>Ding, Bangfu</au><au>Zhao, Jianhui</au><au>Zhou, Zhenyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window</atitle><jtitle>Applied physics letters</jtitle><date>2017-05-29</date><risdate>2017</risdate><volume>110</volume><issue>22</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this study, we present a metal/Ba0.6Sr0.4TiO3/SiO2/Si (MBOS) structure for charge trapping memory, where the single Ba0.6Sr0.4TiO3 film acts as the blocking layer and charge trapping layer. This MBOS device structure demonstrates excellent charge trapping characteristics, a large memory window up to 8.4 V under an applied voltage of ±12 V, robust charge retention of only 4% charge loss after 1.08 × 104 s, fast switching rate, and great program/erase endurance. These attractive features are attributed to the high density of defect states in the Ba0.6Sr0.4TiO3 film and its inter-diffusion interface with SiO2. The properties of defect states in the Ba0.6Sr0.4TiO3 film are investigated through measurements of photoluminescence and photoluminescence excitation spectroscopy. The energy levels of these defect states are found to be distributed between 2.66 eV and 4.05 eV above the valence band. The inter-diffusion at the Ba0.6Sr0.4TiO3/SiO2 interface is observed by high-resolution transmission electron microscopy. More defect sites were created to obtain a better charge trapping capability and retention characteristics.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4984220</doi><tpages>5</tpages></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Defects Electrons Energy levels Excitation spectra Photoluminescence Silicon dioxide Transmission electron microscopy Trapping Valence band |
| title | A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window |
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