Effects of the Temperature Gradient Near the Crystal‐Melt Interface in Top Seeded Solution Growth of SiC Crystal

The top seeded solution growth (TSSG) method is a promising technique for fabricating high‐quality silicon carbide (SiC) single crystals. The carbon required to grow SiC is provided by dissolving the graphite crucible in the silicon melt, and the carbon distribution in the silicon melt is governed b...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2018-10, Vol.215 (20), p.n/a
Hauptverfasser:	Ha, Minh‐Tan, Shin, Yun‐Ji, Lee, Myung‐Hyun, Kim, Cheol‐Jin, Jeong, Seong‐Min
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Chemical etching Crucibles Crystal growth Crystal structure Crystals Dislocation density finite element analysis Finite element method hot zone Morphology Optical microscopy Organic chemistry Polytypes Raman spectroscopy Silicon Silicon carbide Simulation Single crystals Stability analysis Surface stability Temperature distribution Temperature gradients top seeded solution growth Velocity distribution X ray spectra X-ray diffraction
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