Density functional theory (DFT) - based GW+BSE calculations to investigate the influence of substitution of Ga with Al on the band gap and the optical spectra of AlxGa1−xN (x = 0, 0.125, 0.25, 1)

Semiconductors have long been the main materials used in the manufacture of charge-based as well as photonic-based electronic devices. GaN, owing to its wide-band gap, is often used for light-emitting diodes, and other optoelectronic applications. To adjust to the desired energy band gap, GaN is oft...

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Bibliographische Detailangaben

Hauptverfasser:	Amaliah, N., Majidi, M. A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum Band gap Bethe-Salpeter equation Density functional theory Electronic devices Electrons Energy gap Gallium nitrides Mathematical analysis Optical communication Optoelectronics Organic light emitting diodes Photonics Wurtzite
Online-Zugang:	Volltext
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