Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

Nanoparticles of I–III–VI semiconductors are promising candidates for novel non-toxic fluorescent materials. However, removal of defect levels responsible for their broad-band emission has not been successful to date. The present study demonstrates, for the first time, the coating of core AgInS 2 na...

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Veröffentlicht in:NPG Asia materials 2018-08, Vol.10 (8), p.713-726
Hauptverfasser: Uematsu, Taro, Wajima, Kazutaka, Sharma, Dharmendar Kumar, Hirata, Shuzo, Yamamoto, Takahisa, Kameyama, Tatsuya, Vacha, Martin, Torimoto, Tsukasa, Kuwabata, Susumu
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Sprache:eng
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