Orientation control of epitaxial tetragonal Pb(ZrxTi1−x)O3 thin films grown on (100)KTaO3 substrates by tuning the Zr/(Zr + Ti) ratio
Pulsed metal organic chemical vapor deposition is used to epitaxially grow 30-nm thick tetragonal Pb(ZrxTi1−x)O3 thin films on (100) KTaO3 single crystal substrates. The in-plane misfit strain, which is controlled by the Zr/(Zr+Ti) ratio of Pb(ZrxTi1−x)O3 thin films, tunes the film orientation. When...
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| Veröffentlicht in: | Applied physics letters 2015-07, Vol.107 (2) |
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| container_title | Applied physics letters |
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| creator | Ichinose, Daichi Nakashima, Takaaki Ehara, Yoshitaka Oikawa, Takahiro Shimizu, Takao Sakata, Osami Yamada, Tomoaki Funakubo, Hiroshi |
| description | Pulsed metal organic chemical vapor deposition is used to epitaxially grow 30-nm thick tetragonal Pb(ZrxTi1−x)O3 thin films on (100) KTaO3 single crystal substrates. The in-plane misfit strain, which is controlled by the Zr/(Zr+Ti) ratio of Pb(ZrxTi1−x)O3 thin films, tunes the film orientation. When Zr/(Zr+Ti) = 0, which leads to the tensile strain from the substrate, a perfectly (100)-oriented film is formed, whereas when Zr/(Zr+Ti) = 0.45, which leads to the compressive strain from the substrate, a completely (001)-oriented film is realized. The volume fraction of the (001)-oriented domain almost linearly increases as the Zr/(Zr+Ti) ratio increases for films with (100) and (001) mixed orientations; this change in the volume fraction can be explained by considering the average lattice parameter matching between the Pb(ZrxTi1−x)O3 thin film and the KTaO3 substrate. These results demonstrate a method to systematically control the film orientation using the Zr/(Zr+Ti) ratio to tune the in-plane strain of Pb(ZrxTi1−x)O3 films grown on (100) KTaO3 single crystal substrates. |
| doi_str_mv | 10.1063/1.4926963 |
| format | Article |
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The in-plane misfit strain, which is controlled by the Zr/(Zr+Ti) ratio of Pb(ZrxTi1−x)O3 thin films, tunes the film orientation. When Zr/(Zr+Ti) = 0, which leads to the tensile strain from the substrate, a perfectly (100)-oriented film is formed, whereas when Zr/(Zr+Ti) = 0.45, which leads to the compressive strain from the substrate, a completely (001)-oriented film is realized. The volume fraction of the (001)-oriented domain almost linearly increases as the Zr/(Zr+Ti) ratio increases for films with (100) and (001) mixed orientations; this change in the volume fraction can be explained by considering the average lattice parameter matching between the Pb(ZrxTi1−x)O3 thin film and the KTaO3 substrate. These results demonstrate a method to systematically control the film orientation using the Zr/(Zr+Ti) ratio to tune the in-plane strain of Pb(ZrxTi1−x)O3 films grown on (100) KTaO3 single crystal substrates.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4926963</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Compressive properties ; Epitaxial growth ; Lattice matching ; Lead ; Metalorganic chemical vapor deposition ; Organic chemicals ; Organic chemistry ; Orientation ; Plane strain ; Single crystals ; Substrates ; Tensile strain ; Thin films ; Titanium ; Zirconium</subject><ispartof>Applied physics letters, 2015-07, Vol.107 (2)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-5ea3da4529187668f161951c804b389b700508cd648d3538d13d52583a8e075f3</citedby><cites>FETCH-LOGICAL-c367t-5ea3da4529187668f161951c804b389b700508cd648d3538d13d52583a8e075f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Ichinose, Daichi</creatorcontrib><creatorcontrib>Nakashima, Takaaki</creatorcontrib><creatorcontrib>Ehara, Yoshitaka</creatorcontrib><creatorcontrib>Oikawa, Takahiro</creatorcontrib><creatorcontrib>Shimizu, Takao</creatorcontrib><creatorcontrib>Sakata, Osami</creatorcontrib><creatorcontrib>Yamada, Tomoaki</creatorcontrib><creatorcontrib>Funakubo, Hiroshi</creatorcontrib><title>Orientation control of epitaxial tetragonal Pb(ZrxTi1−x)O3 thin films grown on (100)KTaO3 substrates by tuning the Zr/(Zr + Ti) ratio</title><title>Applied physics letters</title><description>Pulsed metal organic chemical vapor deposition is used to epitaxially grow 30-nm thick tetragonal Pb(ZrxTi1−x)O3 thin films on (100) KTaO3 single crystal substrates. The in-plane misfit strain, which is controlled by the Zr/(Zr+Ti) ratio of Pb(ZrxTi1−x)O3 thin films, tunes the film orientation. When Zr/(Zr+Ti) = 0, which leads to the tensile strain from the substrate, a perfectly (100)-oriented film is formed, whereas when Zr/(Zr+Ti) = 0.45, which leads to the compressive strain from the substrate, a completely (001)-oriented film is realized. The volume fraction of the (001)-oriented domain almost linearly increases as the Zr/(Zr+Ti) ratio increases for films with (100) and (001) mixed orientations; this change in the volume fraction can be explained by considering the average lattice parameter matching between the Pb(ZrxTi1−x)O3 thin film and the KTaO3 substrate. These results demonstrate a method to systematically control the film orientation using the Zr/(Zr+Ti) ratio to tune the in-plane strain of Pb(ZrxTi1−x)O3 films grown on (100) KTaO3 single crystal substrates.</description><subject>Applied physics</subject><subject>Compressive properties</subject><subject>Epitaxial growth</subject><subject>Lattice matching</subject><subject>Lead</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Orientation</subject><subject>Plane strain</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Tensile strain</subject><subject>Thin films</subject><subject>Titanium</subject><subject>Zirconium</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotUD1PwzAQtRBIlMLAP7DE0gql9cWJ44yo4ktUKkNYukRO4hRXaVxsR7QbI4iNn9hfgqt2ON2d7r2new-hayAjIIyOYRSlIUsZPUE9IEkSUAB-inqEEBqwNIZzdGHt0q9xSGkP_c6Mkq0TTukWl7p1RjdY11iulRMbJRrspDNioVs_vhaDudlkCnbff5vhjGL3rlpcq2Zl8cLozxZ7kQEQMnzJhD_brrCe7KTFxRa7rlXtwnMknpuxV9p9_dz6ytQQm_0Dl-isFo2VV8feR28P99nkKZjOHp8nd9OgpCxxQSwFrUQUhynwhDFeAwNvrOQkKihPi8R7I7ysWMQrGlNeAa3iMOZUcEmSuKZ9dHPQXRv90Unr8qXujDdo8xDCCCCJGPeo4QFVGm2tkXW-NmolzDYHku-zziE_Zk3_AQIpcSE</recordid><startdate>20150713</startdate><enddate>20150713</enddate><creator>Ichinose, Daichi</creator><creator>Nakashima, Takaaki</creator><creator>Ehara, Yoshitaka</creator><creator>Oikawa, Takahiro</creator><creator>Shimizu, Takao</creator><creator>Sakata, Osami</creator><creator>Yamada, Tomoaki</creator><creator>Funakubo, Hiroshi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150713</creationdate><title>Orientation control of epitaxial tetragonal Pb(ZrxTi1−x)O3 thin films grown on (100)KTaO3 substrates by tuning the Zr/(Zr + Ti) ratio</title><author>Ichinose, Daichi ; Nakashima, Takaaki ; Ehara, Yoshitaka ; Oikawa, Takahiro ; Shimizu, Takao ; Sakata, Osami ; Yamada, Tomoaki ; Funakubo, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-5ea3da4529187668f161951c804b389b700508cd648d3538d13d52583a8e075f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Compressive properties</topic><topic>Epitaxial growth</topic><topic>Lattice matching</topic><topic>Lead</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Orientation</topic><topic>Plane strain</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Tensile strain</topic><topic>Thin films</topic><topic>Titanium</topic><topic>Zirconium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ichinose, Daichi</creatorcontrib><creatorcontrib>Nakashima, Takaaki</creatorcontrib><creatorcontrib>Ehara, Yoshitaka</creatorcontrib><creatorcontrib>Oikawa, Takahiro</creatorcontrib><creatorcontrib>Shimizu, Takao</creatorcontrib><creatorcontrib>Sakata, Osami</creatorcontrib><creatorcontrib>Yamada, Tomoaki</creatorcontrib><creatorcontrib>Funakubo, Hiroshi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ichinose, Daichi</au><au>Nakashima, Takaaki</au><au>Ehara, Yoshitaka</au><au>Oikawa, Takahiro</au><au>Shimizu, Takao</au><au>Sakata, Osami</au><au>Yamada, Tomoaki</au><au>Funakubo, Hiroshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Orientation control of epitaxial tetragonal Pb(ZrxTi1−x)O3 thin films grown on (100)KTaO3 substrates by tuning the Zr/(Zr + Ti) ratio</atitle><jtitle>Applied physics letters</jtitle><date>2015-07-13</date><risdate>2015</risdate><volume>107</volume><issue>2</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Pulsed metal organic chemical vapor deposition is used to epitaxially grow 30-nm thick tetragonal Pb(ZrxTi1−x)O3 thin films on (100) KTaO3 single crystal substrates. The in-plane misfit strain, which is controlled by the Zr/(Zr+Ti) ratio of Pb(ZrxTi1−x)O3 thin films, tunes the film orientation. When Zr/(Zr+Ti) = 0, which leads to the tensile strain from the substrate, a perfectly (100)-oriented film is formed, whereas when Zr/(Zr+Ti) = 0.45, which leads to the compressive strain from the substrate, a completely (001)-oriented film is realized. The volume fraction of the (001)-oriented domain almost linearly increases as the Zr/(Zr+Ti) ratio increases for films with (100) and (001) mixed orientations; this change in the volume fraction can be explained by considering the average lattice parameter matching between the Pb(ZrxTi1−x)O3 thin film and the KTaO3 substrate. These results demonstrate a method to systematically control the film orientation using the Zr/(Zr+Ti) ratio to tune the in-plane strain of Pb(ZrxTi1−x)O3 films grown on (100) KTaO3 single crystal substrates.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4926963</doi></addata></record> |
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| subjects | Applied physics Compressive properties Epitaxial growth Lattice matching Lead Metalorganic chemical vapor deposition Organic chemicals Organic chemistry Orientation Plane strain Single crystals Substrates Tensile strain Thin films Titanium Zirconium |
| title | Orientation control of epitaxial tetragonal Pb(ZrxTi1−x)O3 thin films grown on (100)KTaO3 substrates by tuning the Zr/(Zr + Ti) ratio |
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