Theoretical and experimental investigation of the atomic and electronic structures at the 4H-SiC(0001)/SiO2 interface

Density functional theory calculations are carried out to investigate the atomic and electronic structures of the 4H-SiC(0001)/SiO2 interface. We find two characteristic interface atomic structures in scanning transmission electron microscopy images: One is an interface in which the density of atoms...

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Veröffentlicht in:Physical review. B 2017-09, Vol.96 (11)
Hauptverfasser: Ono, Tomoya, Kirkham, Christopher James, Saito, Shoichiro, Oshima, Yoshifumi
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Sprache:eng
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