Enhancement of thermoelectric figure of merit in β -Zn4Sb3 by indium doping control

We demonstrate the control of phase composition in Bridgman-grown β-Zn4Sb3 crystals by indium doping, an effective way to overcome the difficulty of growing very pure β-Zn4Sb3 thermoelectric material. The crystal structures are characterized by Rietveld refinement with synchrotron X-ray diffraction...

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Veröffentlicht in:	Applied physics letters 2015-09, Vol.107 (12)
Hauptverfasser:	Wei, Pai-Chun, Yang, Chun-Chuen, Chen, Jeng-Lung, Sankar, Raman, Chen, Chi-Liang, Hsu, Chia-Hao, Chang, Chung-Chieh, Chen, Cheng-Lung, Dong, Chung-Li, Chou, Fang-Cheng, Chen, Kuei-Hsien, Wu, Maw-Kuen, Chen, Yang-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bridgman method Crystal growth Crystal structure Diffraction Doping Electrical resistivity Figure of merit High temperature Indium Phase composition Seebeck effect Synchrotron radiation Thermal conductivity Thermoelectric materials Thermoelectricity X-ray diffraction Zinc antimonides
Online-Zugang:	Volltext
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