Enhancement of thermoelectric figure of merit in β -Zn4Sb3 by indium doping control
We demonstrate the control of phase composition in Bridgman-grown β-Zn4Sb3 crystals by indium doping, an effective way to overcome the difficulty of growing very pure β-Zn4Sb3 thermoelectric material. The crystal structures are characterized by Rietveld refinement with synchrotron X-ray diffraction...
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| Veröffentlicht in: | Applied physics letters 2015-09, Vol.107 (12) |
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| container_issue | 12 |
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| container_title | Applied physics letters |
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| creator | Wei, Pai-Chun Yang, Chun-Chuen Chen, Jeng-Lung Sankar, Raman Chen, Chi-Liang Hsu, Chia-Hao Chang, Chung-Chieh Chen, Cheng-Lung Dong, Chung-Li Chou, Fang-Cheng Chen, Kuei-Hsien Wu, Maw-Kuen Chen, Yang-Yuan |
| description | We demonstrate the control of phase composition in Bridgman-grown β-Zn4Sb3 crystals by indium doping, an effective way to overcome the difficulty of growing very pure β-Zn4Sb3 thermoelectric material. The crystal structures are characterized by Rietveld refinement with synchrotron X-ray diffraction data. The results show an anisotropic lattice expansion in In-doped β-Zn4Sb3 wherein the zinc atoms are partially substituted by indium ones at 36f site of R-3c symmetry. Through the elimination of ZnSb phase, all the three individual thermoelectric properties are simultaneously improved, i.e., increasing electrical conductivity and Seebeck coefficient while reducing thermal conductivity. Under an optimal In concentration (x = 0.05), pure phase β-Zn4Sb3 crystal can be obtained, which possesses a high figure of merit (ZT) of 1.4 at 700 K. |
| doi_str_mv | 10.1063/1.4931361 |
| format | Article |
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The crystal structures are characterized by Rietveld refinement with synchrotron X-ray diffraction data. The results show an anisotropic lattice expansion in In-doped β-Zn4Sb3 wherein the zinc atoms are partially substituted by indium ones at 36f site of R-3c symmetry. Through the elimination of ZnSb phase, all the three individual thermoelectric properties are simultaneously improved, i.e., increasing electrical conductivity and Seebeck coefficient while reducing thermal conductivity. Under an optimal In concentration (x = 0.05), pure phase β-Zn4Sb3 crystal can be obtained, which possesses a high figure of merit (ZT) of 1.4 at 700 K.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4931361</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Bridgman method ; Crystal growth ; Crystal structure ; Diffraction ; Doping ; Electrical resistivity ; Figure of merit ; High temperature ; Indium ; Phase composition ; Seebeck effect ; Synchrotron radiation ; Thermal conductivity ; Thermoelectric materials ; Thermoelectricity ; X-ray diffraction ; Zinc antimonides</subject><ispartof>Applied physics letters, 2015-09, Vol.107 (12)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-acd8952bac66234fd428ae150320b4ee59b658389a78d05ff01dffa2acdc41613</citedby><cites>FETCH-LOGICAL-c257t-acd8952bac66234fd428ae150320b4ee59b658389a78d05ff01dffa2acdc41613</cites><orcidid>0000-0003-2225-7280 ; 0000-0002-9397-2516</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Wei, Pai-Chun</creatorcontrib><creatorcontrib>Yang, Chun-Chuen</creatorcontrib><creatorcontrib>Chen, Jeng-Lung</creatorcontrib><creatorcontrib>Sankar, Raman</creatorcontrib><creatorcontrib>Chen, Chi-Liang</creatorcontrib><creatorcontrib>Hsu, Chia-Hao</creatorcontrib><creatorcontrib>Chang, Chung-Chieh</creatorcontrib><creatorcontrib>Chen, Cheng-Lung</creatorcontrib><creatorcontrib>Dong, Chung-Li</creatorcontrib><creatorcontrib>Chou, Fang-Cheng</creatorcontrib><creatorcontrib>Chen, Kuei-Hsien</creatorcontrib><creatorcontrib>Wu, Maw-Kuen</creatorcontrib><creatorcontrib>Chen, Yang-Yuan</creatorcontrib><title>Enhancement of thermoelectric figure of merit in β -Zn4Sb3 by indium doping control</title><title>Applied physics letters</title><description>We demonstrate the control of phase composition in Bridgman-grown β-Zn4Sb3 crystals by indium doping, an effective way to overcome the difficulty of growing very pure β-Zn4Sb3 thermoelectric material. The crystal structures are characterized by Rietveld refinement with synchrotron X-ray diffraction data. The results show an anisotropic lattice expansion in In-doped β-Zn4Sb3 wherein the zinc atoms are partially substituted by indium ones at 36f site of R-3c symmetry. Through the elimination of ZnSb phase, all the three individual thermoelectric properties are simultaneously improved, i.e., increasing electrical conductivity and Seebeck coefficient while reducing thermal conductivity. Under an optimal In concentration (x = 0.05), pure phase β-Zn4Sb3 crystal can be obtained, which possesses a high figure of merit (ZT) of 1.4 at 700 K.</description><subject>Applied physics</subject><subject>Bridgman method</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Diffraction</subject><subject>Doping</subject><subject>Electrical resistivity</subject><subject>Figure of merit</subject><subject>High temperature</subject><subject>Indium</subject><subject>Phase composition</subject><subject>Seebeck effect</subject><subject>Synchrotron radiation</subject><subject>Thermal conductivity</subject><subject>Thermoelectric materials</subject><subject>Thermoelectricity</subject><subject>X-ray diffraction</subject><subject>Zinc antimonides</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkE1OwzAQhS0EEqWw4AaWWLFI8dix4yxRVX6kSiwoGzaW49itq8YujrPotTgIZyJVu3qa976ZkR5C90BmQAR7gllZM2ACLtAESFUVDEBeogkhhBWi5nCNbvp-O46cMjZBq0XY6GBsZ0PG0eG8samLdmdNTt5g59dDssegs8ln7AP--8XFdyg_G4abw2i0fuhwG_c-rLGJIae4u0VXTu96e3fWKfp6Wazmb8Xy4_V9_rwsDOVVLrRpZc1po40QlJWuLanUFjhhlDSltbxuBJdM1rqSLeHOEWid03TcMyUIYFP0cLq7T_FnsH1W2zikML5UFGhJalFJOVKPJ8qk2PfJOrVPvtPpoICoY2kK1Lk09g-KrV5H</recordid><startdate>20150921</startdate><enddate>20150921</enddate><creator>Wei, Pai-Chun</creator><creator>Yang, Chun-Chuen</creator><creator>Chen, Jeng-Lung</creator><creator>Sankar, Raman</creator><creator>Chen, Chi-Liang</creator><creator>Hsu, Chia-Hao</creator><creator>Chang, Chung-Chieh</creator><creator>Chen, Cheng-Lung</creator><creator>Dong, Chung-Li</creator><creator>Chou, Fang-Cheng</creator><creator>Chen, Kuei-Hsien</creator><creator>Wu, Maw-Kuen</creator><creator>Chen, Yang-Yuan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2225-7280</orcidid><orcidid>https://orcid.org/0000-0002-9397-2516</orcidid></search><sort><creationdate>20150921</creationdate><title>Enhancement of thermoelectric figure of merit in β -Zn4Sb3 by indium doping control</title><author>Wei, Pai-Chun ; Yang, Chun-Chuen ; Chen, Jeng-Lung ; Sankar, Raman ; Chen, Chi-Liang ; Hsu, Chia-Hao ; Chang, Chung-Chieh ; Chen, Cheng-Lung ; Dong, Chung-Li ; Chou, Fang-Cheng ; Chen, Kuei-Hsien ; Wu, Maw-Kuen ; Chen, Yang-Yuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-acd8952bac66234fd428ae150320b4ee59b658389a78d05ff01dffa2acdc41613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Bridgman method</topic><topic>Crystal growth</topic><topic>Crystal structure</topic><topic>Diffraction</topic><topic>Doping</topic><topic>Electrical resistivity</topic><topic>Figure of merit</topic><topic>High temperature</topic><topic>Indium</topic><topic>Phase composition</topic><topic>Seebeck effect</topic><topic>Synchrotron radiation</topic><topic>Thermal conductivity</topic><topic>Thermoelectric materials</topic><topic>Thermoelectricity</topic><topic>X-ray diffraction</topic><topic>Zinc antimonides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wei, Pai-Chun</creatorcontrib><creatorcontrib>Yang, Chun-Chuen</creatorcontrib><creatorcontrib>Chen, Jeng-Lung</creatorcontrib><creatorcontrib>Sankar, Raman</creatorcontrib><creatorcontrib>Chen, Chi-Liang</creatorcontrib><creatorcontrib>Hsu, Chia-Hao</creatorcontrib><creatorcontrib>Chang, Chung-Chieh</creatorcontrib><creatorcontrib>Chen, Cheng-Lung</creatorcontrib><creatorcontrib>Dong, Chung-Li</creatorcontrib><creatorcontrib>Chou, Fang-Cheng</creatorcontrib><creatorcontrib>Chen, Kuei-Hsien</creatorcontrib><creatorcontrib>Wu, Maw-Kuen</creatorcontrib><creatorcontrib>Chen, Yang-Yuan</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wei, Pai-Chun</au><au>Yang, Chun-Chuen</au><au>Chen, Jeng-Lung</au><au>Sankar, Raman</au><au>Chen, Chi-Liang</au><au>Hsu, Chia-Hao</au><au>Chang, Chung-Chieh</au><au>Chen, Cheng-Lung</au><au>Dong, Chung-Li</au><au>Chou, Fang-Cheng</au><au>Chen, Kuei-Hsien</au><au>Wu, Maw-Kuen</au><au>Chen, Yang-Yuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of thermoelectric figure of merit in β -Zn4Sb3 by indium doping control</atitle><jtitle>Applied physics letters</jtitle><date>2015-09-21</date><risdate>2015</risdate><volume>107</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We demonstrate the control of phase composition in Bridgman-grown β-Zn4Sb3 crystals by indium doping, an effective way to overcome the difficulty of growing very pure β-Zn4Sb3 thermoelectric material. The crystal structures are characterized by Rietveld refinement with synchrotron X-ray diffraction data. The results show an anisotropic lattice expansion in In-doped β-Zn4Sb3 wherein the zinc atoms are partially substituted by indium ones at 36f site of R-3c symmetry. Through the elimination of ZnSb phase, all the three individual thermoelectric properties are simultaneously improved, i.e., increasing electrical conductivity and Seebeck coefficient while reducing thermal conductivity. Under an optimal In concentration (x = 0.05), pure phase β-Zn4Sb3 crystal can be obtained, which possesses a high figure of merit (ZT) of 1.4 at 700 K.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4931361</doi><orcidid>https://orcid.org/0000-0003-2225-7280</orcidid><orcidid>https://orcid.org/0000-0002-9397-2516</orcidid></addata></record> |
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| subjects | Applied physics Bridgman method Crystal growth Crystal structure Diffraction Doping Electrical resistivity Figure of merit High temperature Indium Phase composition Seebeck effect Synchrotron radiation Thermal conductivity Thermoelectric materials Thermoelectricity X-ray diffraction Zinc antimonides |
| title | Enhancement of thermoelectric figure of merit in β -Zn4Sb3 by indium doping control |
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