Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous AlxOy

Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous AlxOy buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-AlxOy are very similar to those observed on standard Si(111) substrates, although the presence...

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Veröffentlicht in:	Journal of applied physics 2015-11, Vol.118 (18)
Hauptverfasser:	Sobanska, M., Korona, K. P., Zytkiewicz, Z. R., Klosek, K., Tchutchulashvili, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic layer epitaxy Buffers Epitaxial growth Gallium nitrides Molecular beam epitaxy Nanowires Nucleation Optical properties Photoluminescence Silicon substrates
Online-Zugang:	Volltext
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