Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes
We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2015-11, Vol.107 (18) |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 18 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 107 |
| creator | Huang, Wen-Hsien Shieh, Jia-Min Pan, Fu-Ming Yang, Chih-Chao Shen, Chang-Hong Wang, Hsing-Hsiang Hsieh, Tung-Ying Wu, Ssu-Yu Wu, Meng-Chyi |
| description | We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels. |
| doi_str_mv | 10.1063/1.4935224 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2123830836</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2123830836</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-6a418b0041272d3c55bc4636f6b1f96d0d50ab707282b24d92b289df726db3013</originalsourceid><addsrcrecordid>eNotUM1KAzEYDKJgrR58g4AnD6lJvt3s7lGKf1DwohcvIdl8227JbmqSKn17V9rLDDMMMzCE3Aq-EFzBg1gUDZRSFmdkJnhVMRCiPiczzjkw1ZTiklyltJ1kKQFm5Gu5MXGNLEezo2MY2U_wJvce6YBDiD0m2hkb-9ZkdNQeqDcJI8PRWD8ZPvyyvME4GE_t3q0x010MLaaE6ZpcdMYnvDnxnHw-P30sX9nq_eVt-bhiLUjITJlC1JbzQshKOmjL0raFAtUpK7pGOe5KbmzFK1lLKwvXTFg3rqukcha4gDm5O_ZOy997TFlvwz6O06SWQkINvAY1pe6PqTaGlCJ2ehf7wcSDFlz_X6eFPl0HfwYfX9A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2123830836</pqid></control><display><type>article</type><title>Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Huang, Wen-Hsien ; Shieh, Jia-Min ; Pan, Fu-Ming ; Yang, Chih-Chao ; Shen, Chang-Hong ; Wang, Hsing-Hsiang ; Hsieh, Tung-Ying ; Wu, Ssu-Yu ; Wu, Meng-Chyi</creator><creatorcontrib>Huang, Wen-Hsien ; Shieh, Jia-Min ; Pan, Fu-Ming ; Yang, Chih-Chao ; Shen, Chang-Hong ; Wang, Hsing-Hsiang ; Hsieh, Tung-Ying ; Wu, Ssu-Yu ; Wu, Meng-Chyi</creatorcontrib><description>We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4935224</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Budgeting ; Budgets ; Bulk density ; Chemical vapor deposition ; Crystallization ; Endurance ; Infrared lasers ; Lasers ; Low voltage ; Organic chemistry ; Semiconductor devices ; Silicon dioxide ; Thin films ; Transistors</subject><ispartof>Applied physics letters, 2015-11, Vol.107 (18)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-6a418b0041272d3c55bc4636f6b1f96d0d50ab707282b24d92b289df726db3013</citedby><cites>FETCH-LOGICAL-c323t-6a418b0041272d3c55bc4636f6b1f96d0d50ab707282b24d92b289df726db3013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Huang, Wen-Hsien</creatorcontrib><creatorcontrib>Shieh, Jia-Min</creatorcontrib><creatorcontrib>Pan, Fu-Ming</creatorcontrib><creatorcontrib>Yang, Chih-Chao</creatorcontrib><creatorcontrib>Shen, Chang-Hong</creatorcontrib><creatorcontrib>Wang, Hsing-Hsiang</creatorcontrib><creatorcontrib>Hsieh, Tung-Ying</creatorcontrib><creatorcontrib>Wu, Ssu-Yu</creatorcontrib><creatorcontrib>Wu, Meng-Chyi</creatorcontrib><title>Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes</title><title>Applied physics letters</title><description>We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.</description><subject>Applied physics</subject><subject>Budgeting</subject><subject>Budgets</subject><subject>Bulk density</subject><subject>Chemical vapor deposition</subject><subject>Crystallization</subject><subject>Endurance</subject><subject>Infrared lasers</subject><subject>Lasers</subject><subject>Low voltage</subject><subject>Organic chemistry</subject><subject>Semiconductor devices</subject><subject>Silicon dioxide</subject><subject>Thin films</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotUM1KAzEYDKJgrR58g4AnD6lJvt3s7lGKf1DwohcvIdl8227JbmqSKn17V9rLDDMMMzCE3Aq-EFzBg1gUDZRSFmdkJnhVMRCiPiczzjkw1ZTiklyltJ1kKQFm5Gu5MXGNLEezo2MY2U_wJvce6YBDiD0m2hkb-9ZkdNQeqDcJI8PRWD8ZPvyyvME4GE_t3q0x010MLaaE6ZpcdMYnvDnxnHw-P30sX9nq_eVt-bhiLUjITJlC1JbzQshKOmjL0raFAtUpK7pGOe5KbmzFK1lLKwvXTFg3rqukcha4gDm5O_ZOy997TFlvwz6O06SWQkINvAY1pe6PqTaGlCJ2ehf7wcSDFlz_X6eFPl0HfwYfX9A</recordid><startdate>20151102</startdate><enddate>20151102</enddate><creator>Huang, Wen-Hsien</creator><creator>Shieh, Jia-Min</creator><creator>Pan, Fu-Ming</creator><creator>Yang, Chih-Chao</creator><creator>Shen, Chang-Hong</creator><creator>Wang, Hsing-Hsiang</creator><creator>Hsieh, Tung-Ying</creator><creator>Wu, Ssu-Yu</creator><creator>Wu, Meng-Chyi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20151102</creationdate><title>Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes</title><author>Huang, Wen-Hsien ; Shieh, Jia-Min ; Pan, Fu-Ming ; Yang, Chih-Chao ; Shen, Chang-Hong ; Wang, Hsing-Hsiang ; Hsieh, Tung-Ying ; Wu, Ssu-Yu ; Wu, Meng-Chyi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-6a418b0041272d3c55bc4636f6b1f96d0d50ab707282b24d92b289df726db3013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Budgeting</topic><topic>Budgets</topic><topic>Bulk density</topic><topic>Chemical vapor deposition</topic><topic>Crystallization</topic><topic>Endurance</topic><topic>Infrared lasers</topic><topic>Lasers</topic><topic>Low voltage</topic><topic>Organic chemistry</topic><topic>Semiconductor devices</topic><topic>Silicon dioxide</topic><topic>Thin films</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Wen-Hsien</creatorcontrib><creatorcontrib>Shieh, Jia-Min</creatorcontrib><creatorcontrib>Pan, Fu-Ming</creatorcontrib><creatorcontrib>Yang, Chih-Chao</creatorcontrib><creatorcontrib>Shen, Chang-Hong</creatorcontrib><creatorcontrib>Wang, Hsing-Hsiang</creatorcontrib><creatorcontrib>Hsieh, Tung-Ying</creatorcontrib><creatorcontrib>Wu, Ssu-Yu</creatorcontrib><creatorcontrib>Wu, Meng-Chyi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Wen-Hsien</au><au>Shieh, Jia-Min</au><au>Pan, Fu-Ming</au><au>Yang, Chih-Chao</au><au>Shen, Chang-Hong</au><au>Wang, Hsing-Hsiang</au><au>Hsieh, Tung-Ying</au><au>Wu, Ssu-Yu</au><au>Wu, Meng-Chyi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes</atitle><jtitle>Applied physics letters</jtitle><date>2015-11-02</date><risdate>2015</risdate><volume>107</volume><issue>18</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4935224</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2015-11, Vol.107 (18) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_journals_2123830836 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Budgeting Budgets Bulk density Chemical vapor deposition Crystallization Endurance Infrared lasers Lasers Low voltage Organic chemistry Semiconductor devices Silicon dioxide Thin films Transistors |
| title | Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T16%3A30%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Charge-trap%20non-volatile%20memories%20fabricated%20by%20laser-enabled%20low-thermal%20budget%20processes&rft.jtitle=Applied%20physics%20letters&rft.au=Huang,%20Wen-Hsien&rft.date=2015-11-02&rft.volume=107&rft.issue=18&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4935224&rft_dat=%3Cproquest_cross%3E2123830836%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2123830836&rft_id=info:pmid/&rfr_iscdi=true |