Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films

For the better performance of organic thin-film transistors (TFTs), gate-insulator surface treatments are often applied. However, the origin of mobility increase has not been well understood because mobility-limiting factors have not been compared quantitatively. In this work, we clarify the influen...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2015-11, Vol.118 (17)
Hauptverfasser: Matsubara, R., Sakai, Y., Nomura, T., Sakai, M., Kudo, K., Majima, Y., Knipp, D., Nakamura, M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 17
container_start_page
container_title Journal of applied physics
container_volume 118
creator Matsubara, R.
Sakai, Y.
Nomura, T.
Sakai, M.
Kudo, K.
Majima, Y.
Knipp, D.
Nakamura, M.
description For the better performance of organic thin-film transistors (TFTs), gate-insulator surface treatments are often applied. However, the origin of mobility increase has not been well understood because mobility-limiting factors have not been compared quantitatively. In this work, we clarify the influence of gate-insulator surface treatments in pentacene thin-film transistors on the limiting factors of mobility, i.e., size of crystal-growth domain, crystallite size, HOMO-band-edge fluctuation, and carrier transport barrier at domain boundary. We quantitatively investigated these factors for pentacene TFTs with bare, hexamethyldisilazane-treated, and polyimide-coated SiO2 layers as gate dielectrics. By applying these surface treatments, size of crystal-growth domain increases but both crystallite size and HOMO-band-edge fluctuation remain unchanged. Analyzing the experimental results, we also show that the barrier height at the boundary between crystal-growth domains is not sensitive to the treatments. The results imply that the essential increase in mobility by these surface treatments is only due to the increase in size of crystal-growth domain or the decrease in the number of energy barriers at domain boundaries in the TFT channel.
doi_str_mv 10.1063/1.4935024
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2123806802</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2123806802</sourcerecordid><originalsourceid>FETCH-LOGICAL-c301t-f67459189b681000b6221583eca32399f05104d50e23bf2e1ff27d43ede70df13</originalsourceid><addsrcrecordid>eNot0c1q3DAQB3BREugm7aFvIOipB6czkr-UWwhtEwiEQnM2sjzanWDLW0kO7LP15WonOQ0M__nNwAjxBeEKodbf8ao0ugJVfhA7hNYUTVXBmdgBKCxa05iP4iKlZwDEVpud-PcYec9Bzl5Oc88j55OkcLDB0UQhy_4k3YEmdnaUOZLNr901vbeZioFpJJcjO5mW6K0juVlxb8PaygcOhedxWidtSJzyHNO1_L3YkDnbzC8kbbDjKVHayBcbeV6SHHnizGEvV3Ab2czjunblA72qclPTJ3Hu7Zjo83u9FE8_f_y5vSseHn_d3948FE4D5sLXTVkZbE1ftwgAfa0UVq0mZ7XSxnioEMqhAlK694rQe9UMpaaBGhg86kvx9c09xvnvQil3z_MS18NTp1DpFuoW1Jr69pZycU4pku-OkScbTx1Ct_2mw-79N_o_CmCE-g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2123806802</pqid></control><display><type>article</type><title>Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Matsubara, R. ; Sakai, Y. ; Nomura, T. ; Sakai, M. ; Kudo, K. ; Majima, Y. ; Knipp, D. ; Nakamura, M.</creator><creatorcontrib>Matsubara, R. ; Sakai, Y. ; Nomura, T. ; Sakai, M. ; Kudo, K. ; Majima, Y. ; Knipp, D. ; Nakamura, M.</creatorcontrib><description>For the better performance of organic thin-film transistors (TFTs), gate-insulator surface treatments are often applied. However, the origin of mobility increase has not been well understood because mobility-limiting factors have not been compared quantitatively. In this work, we clarify the influence of gate-insulator surface treatments in pentacene thin-film transistors on the limiting factors of mobility, i.e., size of crystal-growth domain, crystallite size, HOMO-band-edge fluctuation, and carrier transport barrier at domain boundary. We quantitatively investigated these factors for pentacene TFTs with bare, hexamethyldisilazane-treated, and polyimide-coated SiO2 layers as gate dielectrics. By applying these surface treatments, size of crystal-growth domain increases but both crystallite size and HOMO-band-edge fluctuation remain unchanged. Analyzing the experimental results, we also show that the barrier height at the boundary between crystal-growth domains is not sensitive to the treatments. The results imply that the essential increase in mobility by these surface treatments is only due to the increase in size of crystal-growth domain or the decrease in the number of energy barriers at domain boundaries in the TFT channel.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4935024</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Barriers ; Carrier transport ; Chemical treatment ; Crystal growth ; Crystallites ; Domains ; Limiting factors ; Organic chemistry ; Quantitative analysis ; Semiconductor devices ; Silicon dioxide ; Thin film transistors ; Transistors ; Variation</subject><ispartof>Journal of applied physics, 2015-11, Vol.118 (17)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c301t-f67459189b681000b6221583eca32399f05104d50e23bf2e1ff27d43ede70df13</citedby><cites>FETCH-LOGICAL-c301t-f67459189b681000b6221583eca32399f05104d50e23bf2e1ff27d43ede70df13</cites><orcidid>0000-0002-5108-1934</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Matsubara, R.</creatorcontrib><creatorcontrib>Sakai, Y.</creatorcontrib><creatorcontrib>Nomura, T.</creatorcontrib><creatorcontrib>Sakai, M.</creatorcontrib><creatorcontrib>Kudo, K.</creatorcontrib><creatorcontrib>Majima, Y.</creatorcontrib><creatorcontrib>Knipp, D.</creatorcontrib><creatorcontrib>Nakamura, M.</creatorcontrib><title>Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films</title><title>Journal of applied physics</title><description>For the better performance of organic thin-film transistors (TFTs), gate-insulator surface treatments are often applied. However, the origin of mobility increase has not been well understood because mobility-limiting factors have not been compared quantitatively. In this work, we clarify the influence of gate-insulator surface treatments in pentacene thin-film transistors on the limiting factors of mobility, i.e., size of crystal-growth domain, crystallite size, HOMO-band-edge fluctuation, and carrier transport barrier at domain boundary. We quantitatively investigated these factors for pentacene TFTs with bare, hexamethyldisilazane-treated, and polyimide-coated SiO2 layers as gate dielectrics. By applying these surface treatments, size of crystal-growth domain increases but both crystallite size and HOMO-band-edge fluctuation remain unchanged. Analyzing the experimental results, we also show that the barrier height at the boundary between crystal-growth domains is not sensitive to the treatments. The results imply that the essential increase in mobility by these surface treatments is only due to the increase in size of crystal-growth domain or the decrease in the number of energy barriers at domain boundaries in the TFT channel.</description><subject>Applied physics</subject><subject>Barriers</subject><subject>Carrier transport</subject><subject>Chemical treatment</subject><subject>Crystal growth</subject><subject>Crystallites</subject><subject>Domains</subject><subject>Limiting factors</subject><subject>Organic chemistry</subject><subject>Quantitative analysis</subject><subject>Semiconductor devices</subject><subject>Silicon dioxide</subject><subject>Thin film transistors</subject><subject>Transistors</subject><subject>Variation</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNot0c1q3DAQB3BREugm7aFvIOipB6czkr-UWwhtEwiEQnM2sjzanWDLW0kO7LP15WonOQ0M__nNwAjxBeEKodbf8ao0ugJVfhA7hNYUTVXBmdgBKCxa05iP4iKlZwDEVpud-PcYec9Bzl5Oc88j55OkcLDB0UQhy_4k3YEmdnaUOZLNr901vbeZioFpJJcjO5mW6K0juVlxb8PaygcOhedxWidtSJzyHNO1_L3YkDnbzC8kbbDjKVHayBcbeV6SHHnizGEvV3Ab2czjunblA72qclPTJ3Hu7Zjo83u9FE8_f_y5vSseHn_d3948FE4D5sLXTVkZbE1ftwgAfa0UVq0mZ7XSxnioEMqhAlK694rQe9UMpaaBGhg86kvx9c09xvnvQil3z_MS18NTp1DpFuoW1Jr69pZycU4pku-OkScbTx1Ct_2mw-79N_o_CmCE-g</recordid><startdate>20151107</startdate><enddate>20151107</enddate><creator>Matsubara, R.</creator><creator>Sakai, Y.</creator><creator>Nomura, T.</creator><creator>Sakai, M.</creator><creator>Kudo, K.</creator><creator>Majima, Y.</creator><creator>Knipp, D.</creator><creator>Nakamura, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5108-1934</orcidid></search><sort><creationdate>20151107</creationdate><title>Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films</title><author>Matsubara, R. ; Sakai, Y. ; Nomura, T. ; Sakai, M. ; Kudo, K. ; Majima, Y. ; Knipp, D. ; Nakamura, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-f67459189b681000b6221583eca32399f05104d50e23bf2e1ff27d43ede70df13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Barriers</topic><topic>Carrier transport</topic><topic>Chemical treatment</topic><topic>Crystal growth</topic><topic>Crystallites</topic><topic>Domains</topic><topic>Limiting factors</topic><topic>Organic chemistry</topic><topic>Quantitative analysis</topic><topic>Semiconductor devices</topic><topic>Silicon dioxide</topic><topic>Thin film transistors</topic><topic>Transistors</topic><topic>Variation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matsubara, R.</creatorcontrib><creatorcontrib>Sakai, Y.</creatorcontrib><creatorcontrib>Nomura, T.</creatorcontrib><creatorcontrib>Sakai, M.</creatorcontrib><creatorcontrib>Kudo, K.</creatorcontrib><creatorcontrib>Majima, Y.</creatorcontrib><creatorcontrib>Knipp, D.</creatorcontrib><creatorcontrib>Nakamura, M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Matsubara, R.</au><au>Sakai, Y.</au><au>Nomura, T.</au><au>Sakai, M.</au><au>Kudo, K.</au><au>Majima, Y.</au><au>Knipp, D.</au><au>Nakamura, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films</atitle><jtitle>Journal of applied physics</jtitle><date>2015-11-07</date><risdate>2015</risdate><volume>118</volume><issue>17</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>For the better performance of organic thin-film transistors (TFTs), gate-insulator surface treatments are often applied. However, the origin of mobility increase has not been well understood because mobility-limiting factors have not been compared quantitatively. In this work, we clarify the influence of gate-insulator surface treatments in pentacene thin-film transistors on the limiting factors of mobility, i.e., size of crystal-growth domain, crystallite size, HOMO-band-edge fluctuation, and carrier transport barrier at domain boundary. We quantitatively investigated these factors for pentacene TFTs with bare, hexamethyldisilazane-treated, and polyimide-coated SiO2 layers as gate dielectrics. By applying these surface treatments, size of crystal-growth domain increases but both crystallite size and HOMO-band-edge fluctuation remain unchanged. Analyzing the experimental results, we also show that the barrier height at the boundary between crystal-growth domains is not sensitive to the treatments. The results imply that the essential increase in mobility by these surface treatments is only due to the increase in size of crystal-growth domain or the decrease in the number of energy barriers at domain boundaries in the TFT channel.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4935024</doi><orcidid>https://orcid.org/0000-0002-5108-1934</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2015-11, Vol.118 (17)
issn 0021-8979
1089-7550
language eng
recordid cdi_proquest_journals_2123806802
source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Barriers
Carrier transport
Chemical treatment
Crystal growth
Crystallites
Domains
Limiting factors
Organic chemistry
Quantitative analysis
Semiconductor devices
Silicon dioxide
Thin film transistors
Transistors
Variation
title Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T00%3A22%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Origin%20of%20mobility%20enhancement%20by%20chemical%20treatment%20of%20gate-dielectric%20surface%20in%20organic%20thin-film%20transistors:%20Quantitative%20analyses%20of%20various%20limiting%20factors%20in%20pentacene%20thin%20films&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Matsubara,%20R.&rft.date=2015-11-07&rft.volume=118&rft.issue=17&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4935024&rft_dat=%3Cproquest_cross%3E2123806802%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2123806802&rft_id=info:pmid/&rfr_iscdi=true