Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier
Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrie...
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| Veröffentlicht in: | Applied physics letters 2015-12, Vol.107 (23) |
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| container_title | Applied physics letters |
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| creator | Ruan, Jieji Qiu, Xiangbiao Yuan, Zhoushen Ji, Dianxiang Wang, Peng Li, Aidong Wu, Di |
| description | Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction. |
| doi_str_mv | 10.1063/1.4937390 |
| format | Article |
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Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4937390</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Barium titanates ; Barriers ; Dielectrics ; Ferroelectric materials ; Ferroelectricity ; Ferromagnetism ; Magnetoresistance ; Magnetoresistivity ; Multiferroic materials ; Random access memory ; Strontium titanates ; Tunnel junctions</subject><ispartof>Applied physics letters, 2015-12, Vol.107 (23)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-80d7d278243676c3c1ee766efcbebb7a78ef824b69656074020ef37ba1f32c3d3</citedby><cites>FETCH-LOGICAL-c257t-80d7d278243676c3c1ee766efcbebb7a78ef824b69656074020ef37ba1f32c3d3</cites><orcidid>0000-0003-3619-1411</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ruan, Jieji</creatorcontrib><creatorcontrib>Qiu, Xiangbiao</creatorcontrib><creatorcontrib>Yuan, Zhoushen</creatorcontrib><creatorcontrib>Ji, Dianxiang</creatorcontrib><creatorcontrib>Wang, Peng</creatorcontrib><creatorcontrib>Li, Aidong</creatorcontrib><creatorcontrib>Wu, Di</creatorcontrib><title>Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier</title><title>Applied physics letters</title><description>Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.</description><subject>Applied physics</subject><subject>Barium titanates</subject><subject>Barriers</subject><subject>Dielectrics</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Ferromagnetism</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Multiferroic materials</subject><subject>Random access memory</subject><subject>Strontium titanates</subject><subject>Tunnel junctions</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kFFLwzAUhYMoOKcP_oOATz50S3LbpH2UoXMw8EWfQ5veYEbbzCRV9u-tbvp0OdyPcziHkFvOFpxJWPJFXoGCip2RGWdKZcB5eU5mjDHIZFXwS3IV426ShQCYkW7T74P_xJb22PtwoHYcTHJ-iNQNtB-75CyG4J2haRwG7OjuH_hy6Z3WtHXYoUnBmeUv-qeo8f3eR5eQNnUIDsM1ubB1F_HmdOfk7enxdfWcbV_Wm9XDNjOiUCkrWataoUqRg1TSgOGISkq0psGmUbUq0U7PRlaykEzlTDC0oJqaWxAGWpiTu6PvVO1jxJj0zo9hmCK14AKUmtzyibo_Uib4GANavQ-ur8NBc6Z_xtRcn8aEb_KnaMk</recordid><startdate>20151207</startdate><enddate>20151207</enddate><creator>Ruan, Jieji</creator><creator>Qiu, Xiangbiao</creator><creator>Yuan, Zhoushen</creator><creator>Ji, Dianxiang</creator><creator>Wang, Peng</creator><creator>Li, Aidong</creator><creator>Wu, Di</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3619-1411</orcidid></search><sort><creationdate>20151207</creationdate><title>Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier</title><author>Ruan, Jieji ; Qiu, Xiangbiao ; Yuan, Zhoushen ; Ji, Dianxiang ; Wang, Peng ; Li, Aidong ; Wu, Di</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-80d7d278243676c3c1ee766efcbebb7a78ef824b69656074020ef37ba1f32c3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Barium titanates</topic><topic>Barriers</topic><topic>Dielectrics</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Ferromagnetism</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Multiferroic materials</topic><topic>Random access memory</topic><topic>Strontium titanates</topic><topic>Tunnel junctions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ruan, Jieji</creatorcontrib><creatorcontrib>Qiu, Xiangbiao</creatorcontrib><creatorcontrib>Yuan, Zhoushen</creatorcontrib><creatorcontrib>Ji, Dianxiang</creatorcontrib><creatorcontrib>Wang, Peng</creatorcontrib><creatorcontrib>Li, Aidong</creatorcontrib><creatorcontrib>Wu, Di</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ruan, Jieji</au><au>Qiu, Xiangbiao</au><au>Yuan, Zhoushen</au><au>Ji, Dianxiang</au><au>Wang, Peng</au><au>Li, Aidong</au><au>Wu, Di</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier</atitle><jtitle>Applied physics letters</jtitle><date>2015-12-07</date><risdate>2015</risdate><volume>107</volume><issue>23</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4937390</doi><orcidid>https://orcid.org/0000-0003-3619-1411</orcidid></addata></record> |
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| subjects | Applied physics Barium titanates Barriers Dielectrics Ferroelectric materials Ferroelectricity Ferromagnetism Magnetoresistance Magnetoresistivity Multiferroic materials Random access memory Strontium titanates Tunnel junctions |
| title | Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier |
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