Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

Defect-related photoluminescence (PL) is analyzed in detail for n-type, p-type, and semi-insulating Mg-doped GaN grown by different techniques. The ultraviolet luminescence (UVL) band is the dominant PL band in conductive n-type and p-type GaN:Mg samples grown by hydride vapor phase epitaxy (HVPE) a...

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Veröffentlicht in:	Physical review. B 2018-05, Vol.97 (20)
Hauptverfasser:	Reshchikov, M A, Ghimire, P, Demchenko, D O
Format:	Artikel
Sprache:	eng
Schlagworte:	Electron transitions Epitaxial growth Gallium nitrides Ionization Luminescence Magnesium Metalorganic chemical vapor deposition Molecular beam epitaxy Organic chemistry Photoluminescence Vapor phase epitaxy Vapor phases Variations
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