Short lifetime components in the relaxation of boron acceptors in silicon

We present time-resolved measurements of the relaxation between the orbital states of the shallow acceptor boron in silicon. The silicon host was enriched Si28, which exhibits lifetime broadened absorption lines. We observed a wide range of T1 lifetimes from 6 ps to 130 ps depending on the excited s...

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Veröffentlicht in:	Physical review. B 2018-03, Vol.97 (12), Article 125205
Hauptverfasser:	Saeedi, K., Stavrias, N., Redlich, B., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H.-J., Thewalt, M. L. W., Murdin, B. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Ionization Service life assessment Silicon
Online-Zugang:	Volltext
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