Phonon properties of ZnSnSb2 + Mn semiconductors: Raman spectroscopy

Doping of II–IV–V2 semiconductors opens up new opportunities for wide application. Addition of Mn to these materials induces formation of magnetic clusters, which are responsible for high‐temperature ferromagnetism. Our aim was to examine how the addition of Mn influences the optical and structural properties of ZnSnSb2 by micro‐Raman spectroscopy. For four samples of Zn1 − xMnxSnSb2 synthesized using the direct fusion method, with x = 0.027, 0.066, 0.076, and 0.086, Raman spectra were measured at room temperature in spectral range from 60 to 300 cm−1. The obtained results indicate that these are multiphase materials. Based on the size and shape of complex microstructures, which consist of different phases and clusters, dispersive and duplex or triplex types of microstructures can be identified. Existence of ZnSb, SnSb, and MnSb phases was confirmed. By analyzing the Raman spectra, phonons of ZnSb and SnSb are determined and they are consistent with the data from literature. Phonon properties of ZnSnSb2, as well as of MnSb, are experimentally obtained for the first time. On the basis of a shift of the ZnSnSb2 phonons, we found that some amount of Mn entered lattice and form Zn1 − xMnxSnSb2. Microstructures affect the physical properties and behavior of a material. Analysis of this complex semiconductors and obtained results are important for their optimization and customization for possible applications. Microstructure of Zn1 − xMnxSnSb2 semiconductors were investigated by Raman spectroscopy. Great inhomogeneity of samples was registered, and besides, ZnSnSb2 existence of ZnSb, SnSb, and MnSb clusters was confirmed. Phonons of ZnSnSb2 and MnSb are experimentally obtained for the first time and fit well with the predicted values. It is confirmed that some amount of Mn entered lattice and formed Zn1 − xMnxSnSb.