Ultra-Low Write Energy Composite Free Layer Spin-Orbit Torque MRAM
A highly efficient exchange-coupled free-layer spin-orbit torque (SOT) magnetic random access memory cell is proposed for ultra-high-density memory. By exploiting typically unrealized benefits of SOT-in particular, its compatibility with low-damping magnetic insulators and the energy efficiencies as...
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| Veröffentlicht in: | IEEE transactions on magnetics 2018-11, Vol.54 (11), p.1-5 |
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| creator | Hsu, Wei-Heng Bell, Roy Victora, R. H. |
| description | A highly efficient exchange-coupled free-layer spin-orbit torque (SOT) magnetic random access memory cell is proposed for ultra-high-density memory. By exploiting typically unrealized benefits of SOT-in particular, its compatibility with low-damping magnetic insulators and the energy efficiencies associated with exchange coupling of hard/soft composite structures-a write energy of 18 aJ/bit for 1 ns switching is achieved. Furthermore, high magnetocrystalline anisotropy materials such as L1 0 -FePt or L1 0 -FePd are employed not only to facilitate achievement of ultra-high-density memory but also to allow for reduction of heavy metal layer volume and a reduction in write energy not seen in previous CoFeB-based cells. This energy is within a factor 72 of the theoretical limit of 60~k_{B}T . It also represents a factor of >500 improvement relative to state-of-the-art DDR4 DRAM cells. |
| doi_str_mv | 10.1109/TMAG.2018.2847235 |
| format | Article |
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H.</creatorcontrib><title>Ultra-Low Write Energy Composite Free Layer Spin-Orbit Torque MRAM</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>A highly efficient exchange-coupled free-layer spin-orbit torque (SOT) magnetic random access memory cell is proposed for ultra-high-density memory. By exploiting typically unrealized benefits of SOT-in particular, its compatibility with low-damping magnetic insulators and the energy efficiencies associated with exchange coupling of hard/soft composite structures-a write energy of 18 aJ/bit for 1 ns switching is achieved. Furthermore, high magnetocrystalline anisotropy materials such as L1 0 -FePt or L1 0 -FePd are employed not only to facilitate achievement of ultra-high-density memory but also to allow for reduction of heavy metal layer volume and a reduction in write energy not seen in previous CoFeB-based cells. This energy is within a factor 72 of the theoretical limit of <inline-formula> <tex-math notation="LaTeX">60~k_{B}T </tex-math></inline-formula>. It also represents a factor of >500 improvement relative to state-of-the-art DDR4 DRAM cells.</description><subject>Anisotropic magnetoresistance</subject><subject>Anisotropy</subject><subject>Composite free layer</subject><subject>Composite structures</subject><subject>Computer memory</subject><subject>Damping</subject><subject>Density</subject><subject>Dynamic random access memory</subject><subject>Exchanging</subject><subject>Heavy metals</subject><subject>Insulators</subject><subject>Intermetallic compounds</subject><subject>magnetic insulator (MI)</subject><subject>Magnetic tunneling</subject><subject>Magnetism</subject><subject>micromagnetic simulation</subject><subject>Perpendicular magnetic anisotropy</subject><subject>Random access memory</subject><subject>Reduction</subject><subject>Reduction (metal working)</subject><subject>spin–orbit torque (SOT)</subject><subject>Switches</subject><subject>Thermal stability</subject><subject>Torque</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9UNFKwzAUDaLgnH6A-BLwOTO3SdvkcY5tCi0D3fAxpO2tdGxrTTpkf2_Khk-Xc88593APIY_AJwBcv6zz6XIScVCTSMk0EvEVGYGWwDhP9DUZ8UAxLRN5S-683wYoY-Aj8rrZ9c6yrP2lX67pkc4P6L5PdNbuu9YPi4VDpJk9oaOfXXNgK1c0PV237ueINP-Y5vfkprY7jw-XOSabxXw9e2PZavk-m2asjLTomRK6LkQKVmsOVZIIXpWxgkDauJRFiXWqKl0hLyxHLYoyCTAOL4FFEUEqxuT5fLdzbcj2vdm2R3cIkSaCCLTQWsiggrOqdK33DmvTuWZv3ckAN0NVZqjKDFWZS1XB83T2NIj4r1eSC6Vi8QctG2L2</recordid><startdate>20181101</startdate><enddate>20181101</enddate><creator>Hsu, Wei-Heng</creator><creator>Bell, Roy</creator><creator>Victora, R. 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H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-839fb371a9901d6630dc581c29a5c4bcef78d9de0ba0e93bc68d952011ae32173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Anisotropic magnetoresistance</topic><topic>Anisotropy</topic><topic>Composite free layer</topic><topic>Composite structures</topic><topic>Computer memory</topic><topic>Damping</topic><topic>Density</topic><topic>Dynamic random access memory</topic><topic>Exchanging</topic><topic>Heavy metals</topic><topic>Insulators</topic><topic>Intermetallic compounds</topic><topic>magnetic insulator (MI)</topic><topic>Magnetic tunneling</topic><topic>Magnetism</topic><topic>micromagnetic simulation</topic><topic>Perpendicular magnetic anisotropy</topic><topic>Random access memory</topic><topic>Reduction</topic><topic>Reduction (metal working)</topic><topic>spin–orbit torque (SOT)</topic><topic>Switches</topic><topic>Thermal stability</topic><topic>Torque</topic><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Wei-Heng</creatorcontrib><creatorcontrib>Bell, Roy</creatorcontrib><creatorcontrib>Victora, R. H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsu, Wei-Heng</au><au>Bell, Roy</au><au>Victora, R. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultra-Low Write Energy Composite Free Layer Spin-Orbit Torque MRAM</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2018-11-01</date><risdate>2018</risdate><volume>54</volume><issue>11</issue><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>A highly efficient exchange-coupled free-layer spin-orbit torque (SOT) magnetic random access memory cell is proposed for ultra-high-density memory. By exploiting typically unrealized benefits of SOT-in particular, its compatibility with low-damping magnetic insulators and the energy efficiencies associated with exchange coupling of hard/soft composite structures-a write energy of 18 aJ/bit for 1 ns switching is achieved. Furthermore, high magnetocrystalline anisotropy materials such as L1 0 -FePt or L1 0 -FePd are employed not only to facilitate achievement of ultra-high-density memory but also to allow for reduction of heavy metal layer volume and a reduction in write energy not seen in previous CoFeB-based cells. This energy is within a factor 72 of the theoretical limit of <inline-formula> <tex-math notation="LaTeX">60~k_{B}T </tex-math></inline-formula>. It also represents a factor of >500 improvement relative to state-of-the-art DDR4 DRAM cells.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMAG.2018.2847235</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-9006-8591</orcidid><orcidid>https://orcid.org/0000-0003-4472-2147</orcidid><orcidid>https://orcid.org/0000-0002-4881-6880</orcidid></addata></record> |
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| subjects | Anisotropic magnetoresistance Anisotropy Composite free layer Composite structures Computer memory Damping Density Dynamic random access memory Exchanging Heavy metals Insulators Intermetallic compounds magnetic insulator (MI) Magnetic tunneling Magnetism micromagnetic simulation Perpendicular magnetic anisotropy Random access memory Reduction Reduction (metal working) spin–orbit torque (SOT) Switches Thermal stability Torque |
| title | Ultra-Low Write Energy Composite Free Layer Spin-Orbit Torque MRAM |
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