Inverse Scattering Method Design of Regrowth-Free Single-Mode Semiconductor Lasers Using Pit Perturbations for Monolithic Integration

An inverse scattering method is used to design regrowth-free single-mode lasers, using etch depth insensitive pits as perturbations in the laser cavity. These pit perturbations are circular holes etched into the waveguide of each laser to a depth 0.8 μm below the quantum wells in the laser material,...

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Veröffentlicht in:	IEEE photonics journal 2018-10, Vol.10 (5), p.1-10
Hauptverfasser:	Shortiss, Kevin, Dernaika, Mohamad, Caro, Ludovic, Seifikar, Masoud, Peters, Frank H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cavity resonators Design Inverse problems Inverse scattering Laser feedback Laser modes Lasers Optical feedback Perturbation methods photonic integrated circuits Photonics Quantum wells Semiconductor lasers Waveguide lasers
Online-Zugang:	Volltext
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