Resonance-enhanced waveguide-coupled silicon-germanium detector

A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-perf...

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Veröffentlicht in:Applied physics letters 2016-02, Vol.108 (7)
Hauptverfasser: Alloatti, L., Ram, R. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at −4 V bias is obtained with a dark current of less than 20 pA.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4941995