Resonance-enhanced waveguide-coupled silicon-germanium detector
A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-perf...
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Veröffentlicht in: | Applied physics letters 2016-02, Vol.108 (7) |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at −4 V bias is obtained with a dark current of less than 20 pA. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4941995 |