Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and A...

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Veröffentlicht in:	Journal of applied physics 2016-03, Vol.119 (9)
Hauptverfasser:	Wu, Dan, Tang, Xiaohong, Wang, Kai, Olivier, Aurelien, Li, Xianqiang
Format:	Artikel
Sprache:	eng
Schlagworte:	ACTIVATION ENERGY Applied physics Catalysis CATALYSTS CHEMICAL VAPOR DEPOSITION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Controllability Epitaxial growth EPITAXY FLOW RATE Flow velocity Gallium arsenide GALLIUM ARSENIDES GOLD INDIUM OXIDES Indium tin oxides Investigations LIQUIDS Metalorganic chemical vapor deposition NANOPARTICLES NANOWIRES Organic chemicals Organic chemistry ORGANOMETALLIC COMPOUNDS Parameters Photovoltaic cells SOLAR CELLS SUBSTRATES TIN OXIDES TUNING ZINC ZINC SULFIDES Zincblende
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