3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits
In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our res...
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| Veröffentlicht in: | AIP advances 2016-05, Vol.6 (5), p.055208-055208-10 |
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| creator | Li, Chi-Kang Wu, Chen-Kuo Hsu, Chung-Cheng Lu, Li-Shuo Li, Heng Lu, Tien-Chang Wu, Yuh-Renn |
| description | In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections. |
| doi_str_mv | 10.1063/1.4950771 |
| format | Article |
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A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.4950771</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Carrier transport ; CARRIERS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CURRENT DENSITY ; CURRENTS ; DIFFUSION ; Dislocation density ; DISLOCATIONS ; DISTRIBUTION ; Efficiency ; GALLIUM NITRIDES ; Indium gallium nitrides ; INJECTION ; LIGHT EMITTING DIODES ; Mathematical models ; Organic light emitting diodes ; Percolation ; QUANTUM EFFICIENCY ; QUANTUM WELLS ; RECOMBINATION ; SPECTROSCOPY ; STRESSES ; Threading dislocations ; Three dimensional models ; THREE-DIMENSIONAL CALCULATIONS ; THREE-DIMENSIONAL LATTICES ; TRAPS ; VISIBLE RADIATION</subject><ispartof>AIP advances, 2016-05, Vol.6 (5), p.055208-055208-10</ispartof><rights>Author(s)</rights><rights>2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c456t-aa4fad39bdc093e6a60b3f04da654338a1d5c8860520ba62655b14806cd82cc73</citedby><cites>FETCH-LOGICAL-c456t-aa4fad39bdc093e6a60b3f04da654338a1d5c8860520ba62655b14806cd82cc73</cites><orcidid>0000-0003-4192-9919 ; 0000-0002-1457-3681</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,860,881,2096,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22611712$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Chi-Kang</creatorcontrib><creatorcontrib>Wu, Chen-Kuo</creatorcontrib><creatorcontrib>Hsu, Chung-Cheng</creatorcontrib><creatorcontrib>Lu, Li-Shuo</creatorcontrib><creatorcontrib>Li, Heng</creatorcontrib><creatorcontrib>Lu, Tien-Chang</creatorcontrib><creatorcontrib>Wu, Yuh-Renn</creatorcontrib><title>3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits</title><title>AIP advances</title><description>In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.</description><subject>Carrier transport</subject><subject>CARRIERS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CURRENT DENSITY</subject><subject>CURRENTS</subject><subject>DIFFUSION</subject><subject>Dislocation density</subject><subject>DISLOCATIONS</subject><subject>DISTRIBUTION</subject><subject>Efficiency</subject><subject>GALLIUM NITRIDES</subject><subject>Indium gallium nitrides</subject><subject>INJECTION</subject><subject>LIGHT EMITTING DIODES</subject><subject>Mathematical models</subject><subject>Organic light emitting diodes</subject><subject>Percolation</subject><subject>QUANTUM EFFICIENCY</subject><subject>QUANTUM WELLS</subject><subject>RECOMBINATION</subject><subject>SPECTROSCOPY</subject><subject>STRESSES</subject><subject>Threading dislocations</subject><subject>Three dimensional models</subject><subject>THREE-DIMENSIONAL CALCULATIONS</subject><subject>THREE-DIMENSIONAL LATTICES</subject><subject>TRAPS</subject><subject>VISIBLE RADIATION</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kd1rFDEQwBdRsNQ--B8EfFK4Nt_JPkrVelDsi_oaZvNxm2MvWZNcS1_8293zSisIHQgTwo_fTGa67i3B5wRLdkHOeS-wUuRFd0KJ0CtGqXz5z_11d1brFi_Be4I1P-l-s08o7Xe-RAsT2mXnp5g2KAfURo8slBJ9Qa1AqnMuDUFyqICL0OKtRz6EaKNP9h6FXNA6XcG3i-WgKW7GhvwutnbQubiIK7qLbUQ_V3WE2Ts0x1bfdK8CTNWfPeTT7seXz98vv66ub67Wlx-vV5YL2VYAPIBj_eAs7pmXIPHAAuYOpOCMaSBOWK0lFhQPIKkUYiBcY2mdptYqdtqtj16XYWvmEndQ7k2GaP4-5LIxUFq0kzf94HsVlPaeCU5tP4BQvVKUUBWCGPjiend05dqiqTY2b0ebU_K2mWXIhChCn6i55F97X5vZ5n1JyyfNoiIa95r3C_X-SNmSay0-PPZGsDns1BDzsNOF_XBkDyWX-ef0CN_m8gSa2YXn4P_NfwCBtK5L</recordid><startdate>20160501</startdate><enddate>20160501</enddate><creator>Li, Chi-Kang</creator><creator>Wu, Chen-Kuo</creator><creator>Hsu, Chung-Cheng</creator><creator>Lu, Li-Shuo</creator><creator>Li, Heng</creator><creator>Lu, Tien-Chang</creator><creator>Wu, Yuh-Renn</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0003-4192-9919</orcidid><orcidid>https://orcid.org/0000-0002-1457-3681</orcidid></search><sort><creationdate>20160501</creationdate><title>3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits</title><author>Li, Chi-Kang ; Wu, Chen-Kuo ; Hsu, Chung-Cheng ; Lu, Li-Shuo ; Li, Heng ; Lu, Tien-Chang ; Wu, Yuh-Renn</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c456t-aa4fad39bdc093e6a60b3f04da654338a1d5c8860520ba62655b14806cd82cc73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Carrier transport</topic><topic>CARRIERS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CURRENT DENSITY</topic><topic>CURRENTS</topic><topic>DIFFUSION</topic><topic>Dislocation density</topic><topic>DISLOCATIONS</topic><topic>DISTRIBUTION</topic><topic>Efficiency</topic><topic>GALLIUM NITRIDES</topic><topic>Indium gallium nitrides</topic><topic>INJECTION</topic><topic>LIGHT EMITTING DIODES</topic><topic>Mathematical models</topic><topic>Organic light emitting diodes</topic><topic>Percolation</topic><topic>QUANTUM EFFICIENCY</topic><topic>QUANTUM WELLS</topic><topic>RECOMBINATION</topic><topic>SPECTROSCOPY</topic><topic>STRESSES</topic><topic>Threading dislocations</topic><topic>Three dimensional models</topic><topic>THREE-DIMENSIONAL CALCULATIONS</topic><topic>THREE-DIMENSIONAL LATTICES</topic><topic>TRAPS</topic><topic>VISIBLE RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Chi-Kang</creatorcontrib><creatorcontrib>Wu, Chen-Kuo</creatorcontrib><creatorcontrib>Hsu, Chung-Cheng</creatorcontrib><creatorcontrib>Lu, Li-Shuo</creatorcontrib><creatorcontrib>Li, Heng</creatorcontrib><creatorcontrib>Lu, Tien-Chang</creatorcontrib><creatorcontrib>Wu, Yuh-Renn</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Chi-Kang</au><au>Wu, Chen-Kuo</au><au>Hsu, Chung-Cheng</au><au>Lu, Li-Shuo</au><au>Li, Heng</au><au>Lu, Tien-Chang</au><au>Wu, Yuh-Renn</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits</atitle><jtitle>AIP advances</jtitle><date>2016-05-01</date><risdate>2016</risdate><volume>6</volume><issue>5</issue><spage>055208</spage><epage>055208-10</epage><pages>055208-055208-10</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4950771</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-4192-9919</orcidid><orcidid>https://orcid.org/0000-0002-1457-3681</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Carrier transport CARRIERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURRENT DENSITY CURRENTS DIFFUSION Dislocation density DISLOCATIONS DISTRIBUTION Efficiency GALLIUM NITRIDES Indium gallium nitrides INJECTION LIGHT EMITTING DIODES Mathematical models Organic light emitting diodes Percolation QUANTUM EFFICIENCY QUANTUM WELLS RECOMBINATION SPECTROSCOPY STRESSES Threading dislocations Three dimensional models THREE-DIMENSIONAL CALCULATIONS THREE-DIMENSIONAL LATTICES TRAPS VISIBLE RADIATION |
| title | 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits |
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