Photoexcited carrier trapping and recombination at Fe centers in GaN

Fe doped GaN was studied by time-resolved photoluminescence (PL) spectroscopy. The shape of PL transients at different temperatures and excitation powers allowed discrimination between electron and hole capture to Fe3+ and Fe2+ centers, respectively. Analysis of the internal structure of Fe ions and...

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Veröffentlicht in:	Journal of applied physics 2016-06, Vol.119 (21)
Hauptverfasser:	Uždavinys, T. K., Marcinkevičius, S., Leach, J. H., Evans, K. R., Look, D. C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Beta decay Carrier recombination CARRIERS CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DOPED MATERIALS ELECTRON CAPTURE ELECTRONS EXCITATION EXCITED STATES Ferric ions Ferrous ions GALLIUM NITRIDES GROUND STATES HOLES IRON IONS LASERS PHOTOLUMINESCENCE Potential barriers PULSES Radiative recombination RECOMBINATION RELAXATION Repetition SPECTROSCOPY TEMPERATURE DEPENDENCE TIME RESOLUTION TRAPPING
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