Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier gener...

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Veröffentlicht in:Journal of applied physics 2016-06, Vol.119 (21)
Hauptverfasser: Chen, H., Verheyen, P., De Heyn, P., Lepage, G., De Coster, J., Balakrishnan, S., Absil, P., Roelkens, G., Van Campenhout, J.
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container_end_page
container_issue 21
container_start_page
container_title Journal of applied physics
container_volume 119
creator Chen, H.
Verheyen, P.
De Heyn, P.
Lepage, G.
De Coster, J.
Balakrishnan, S.
Absil, P.
Roelkens, G.
Van Campenhout, J.
description We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling.
doi_str_mv 10.1063/1.4953147
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source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Dark current
Germanium
Leakage current
Minority carriers
Photodiodes
Photometers
title Dark current analysis in high-speed germanium p-i-n waveguide photodetectors
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