High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal proces...

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Veröffentlicht in:	AIP advances 2016-08, Vol.6 (8), p.085111-085111-8
Hauptverfasser:	Yeh, Chia-Pin, Lisker, Marco, Kalkofen, Bodo, Burte, Edmund P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Gas mixtures Inspection Ion etching Iridium Process parameters Reactive ion etching Substrates Thin films
Online-Zugang:	Volltext
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