High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal proces...
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| Veröffentlicht in: | AIP advances 2016-08, Vol.6 (8), p.085111-085111-8 |
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| container_end_page | 085111-8 |
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| container_issue | 8 |
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| container_title | AIP advances |
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| creator | Yeh, Chia-Pin Lisker, Marco Kalkofen, Bodo Burte, Edmund P. |
| description | Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved. |
| doi_str_mv | 10.1063/1.4961447 |
| format | Article |
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The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.4961447</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum ; Gas mixtures ; Inspection ; Ion etching ; Iridium ; Process parameters ; Reactive ion etching ; Substrates ; Thin films</subject><ispartof>AIP advances, 2016-08, Vol.6 (8), p.085111-085111-8</ispartof><rights>Author(s)</rights><rights>2016 Author(s). 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The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.</description><subject>Aluminum</subject><subject>Gas mixtures</subject><subject>Inspection</subject><subject>Ion etching</subject><subject>Iridium</subject><subject>Process parameters</subject><subject>Reactive ion etching</subject><subject>Substrates</subject><subject>Thin films</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqdkU1LBDEMhgdRUNSD_6DgSWHdfk2nPcriFwhe9FwybWe368x2bDuK_97qino2hyYkD2-SpqpOCL4gWLA5ueBKEM6bneqAklrOGKVi90-8Xx2ntMbFuCJY8oOqvfXLFcpuGF2EPEWHogOT_atDPmyQy2blN0sUOuSjt34aUC4J1Pl-SOjN5xWCfhr8phQGSM-o1BbXfP5A55cRjT2kAY6qvQ765I6__WH1dH31uLid3T_c3C0u72eGcdbMBFNSEKC0dawWrWKyPIpKYoXB0vC2aaUFbp20tWktJxLqspcTQMG1WLHD6m6rawOs9Rj9APFdB_D6KxHiUkPM3vROc44BHDFN0ylugSpshe1AKGAU6s4UrdOt1hjDy-RS1uswxU0ZX1NCiVA1ZXWhzraUiSGl6LqfrgTrz4toor8vUtjzLZuMz5DL5_4Pfg3xF9Sj7dgH59OYNg</recordid><startdate>201608</startdate><enddate>201608</enddate><creator>Yeh, Chia-Pin</creator><creator>Lisker, Marco</creator><creator>Kalkofen, Bodo</creator><creator>Burte, Edmund P.</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-5250-7992</orcidid></search><sort><creationdate>201608</creationdate><title>High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma</title><author>Yeh, Chia-Pin ; Lisker, Marco ; Kalkofen, Bodo ; Burte, Edmund P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3437-639861a22be356b9386b99281d6c08c4b7b8da4de8d5cbd418a5158e6a2aeb093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Aluminum</topic><topic>Gas mixtures</topic><topic>Inspection</topic><topic>Ion etching</topic><topic>Iridium</topic><topic>Process parameters</topic><topic>Reactive ion etching</topic><topic>Substrates</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yeh, Chia-Pin</creatorcontrib><creatorcontrib>Lisker, Marco</creatorcontrib><creatorcontrib>Kalkofen, Bodo</creatorcontrib><creatorcontrib>Burte, Edmund P.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yeh, Chia-Pin</au><au>Lisker, Marco</au><au>Kalkofen, Bodo</au><au>Burte, Edmund P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma</atitle><jtitle>AIP advances</jtitle><date>2016-08</date><risdate>2016</risdate><volume>6</volume><issue>8</issue><spage>085111</spage><epage>085111-8</epage><pages>085111-085111-8</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4961447</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-5250-7992</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Aluminum Gas mixtures Inspection Ion etching Iridium Process parameters Reactive ion etching Substrates Thin films |
| title | High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma |
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