Work function of bulk-insulating topological insulator Bi2–xSbxTe3–ySey
Recent discovery of bulk insulating topological insulator (TI) Bi2–xSbxTe3–ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowled...
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Veröffentlicht in: | Applied physics letters 2016-08, Vol.109 (9) |
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creator | Takane Daichi Segawa Kouji Ando Yoichi |
description | Recent discovery of bulk insulating topological insulator (TI) Bi2–xSbxTe3–ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi2–xSbxTe3–ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices. |
doi_str_mv | 10.1063/1.4961987 |
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For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi2–xSbxTe3–ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4961987</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Bending machines ; Chemical potential ; Dependence ; Electronic devices ; Organic chemistry ; Photoelectric emission ; Photoelectron spectroscopy ; Spectrum analysis ; Titanium ; Work functions</subject><ispartof>Applied physics letters, 2016-08, Vol.109 (9)</ispartof><rights>2016 Author(s). 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We have determined the compositional dependence of the work function in Bi2–xSbxTe3–ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.</description><subject>Applied physics</subject><subject>Bending machines</subject><subject>Chemical potential</subject><subject>Dependence</subject><subject>Electronic devices</subject><subject>Organic chemistry</subject><subject>Photoelectric emission</subject><subject>Photoelectron spectroscopy</subject><subject>Spectrum analysis</subject><subject>Titanium</subject><subject>Work functions</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNotjc1Kw0AcxBdRMFYPvsGC563__35l96hFq7TQQysey2azKUlDtuYD2pvv4Bv6JAbsaWZ-AzOE3CNMEbR4xKm0Gq1JL0iCkKZMIJpLkgCAYNoqvCY3XVeNUXEhErL4jO2eFkPj-zI2NBY0G-o9K5tuqF1fNjvax0Os4670rqZnHFv6XPLf75_jOjtughjdaR1Ot-SqcHUX7s46IR-vL5vZG1uu5u-zpyWruLQ9Cx6ctJjlDi0YobRRPLjcOUg5V9o7I3WhrCmcBSW5llluci_GMvW5BhQT8vC_e2jj1xC6flvFoW3Gyy1HjtoKw434A2Z-T2k</recordid><startdate>20160829</startdate><enddate>20160829</enddate><creator>Takane Daichi</creator><creator>Segawa Kouji</creator><creator>Ando Yoichi</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160829</creationdate><title>Work function of bulk-insulating topological insulator Bi2–xSbxTe3–ySey</title><author>Takane Daichi ; Segawa Kouji ; Ando Yoichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j249t-ec0a491bda1908356852eadaa072256ca846f598fa9054264bd8dc37227cd6013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Bending machines</topic><topic>Chemical potential</topic><topic>Dependence</topic><topic>Electronic devices</topic><topic>Organic chemistry</topic><topic>Photoelectric emission</topic><topic>Photoelectron spectroscopy</topic><topic>Spectrum analysis</topic><topic>Titanium</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takane Daichi</creatorcontrib><creatorcontrib>Segawa Kouji</creatorcontrib><creatorcontrib>Ando Yoichi</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takane Daichi</au><au>Segawa Kouji</au><au>Ando Yoichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Work function of bulk-insulating topological insulator Bi2–xSbxTe3–ySey</atitle><jtitle>Applied physics letters</jtitle><date>2016-08-29</date><risdate>2016</risdate><volume>109</volume><issue>9</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Recent discovery of bulk insulating topological insulator (TI) Bi2–xSbxTe3–ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi2–xSbxTe3–ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4961987</doi></addata></record> |
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subjects | Applied physics Bending machines Chemical potential Dependence Electronic devices Organic chemistry Photoelectric emission Photoelectron spectroscopy Spectrum analysis Titanium Work functions |
title | Work function of bulk-insulating topological insulator Bi2–xSbxTe3–ySey |
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