Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC

For a better comprehension of hydrogen intercalation of graphene grown on a silicon carbide substrate, an advanced analytical technique is required. We report that with a carefully established measurement procedure it is possible to obtain a reliable and reproducible depth profile of bi-layer graphe...

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Veröffentlicht in:	Applied physics letters 2016-07, Vol.109 (1)
Hauptverfasser:	Michałowski, Paweł Piotr, Kaszub, Wawrzyniec, Merkulov, Alexandre, Strupiński, Włodek
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Chemical vapor deposition Contamination Depth profiling Graphene Hydrogen Intercalation Organic chemistry Secondary ion mass spectroscopy Silicon carbide Silicon substrates Thickness
Online-Zugang:	Volltext
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