AlGaN channel field effect transistors with graded heterostructure ohmic contacts

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interfa...

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Veröffentlicht in:	Applied physics letters 2016-09, Vol.109 (13)
Hauptverfasser:	Bajaj, Sanyam, Akyol, Fatih, Krishnamoorthy, Sriram, Zhang, Yuewei, Rajan, Siddharth
Format:	Artikel
Sprache:	eng
Schlagworte:	Affinity Aluminum gallium nitrides Aluminum oxide Applied physics Contact resistance Electron affinity Energy gap Field effect transistors Heterostructures Insulators MIS (semiconductors) Semiconductor devices Transistors Ultrawideband
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