Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)
Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the f...
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| Veröffentlicht in: | AIP advances 2016-12, Vol.6 (12), p.125209-125209-6 |
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| creator | Chopra, Anuj Bayraktar, Muharrem Nijland, Maarten ten Elshof, Johan E. Bijkerk, Fred Rijnders, Guus |
| description | Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber–Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ∼97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices. |
| doi_str_mv | 10.1063/1.4971373 |
| format | Article |
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Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber–Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ∼97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. 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The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices.</description><subject>Alumina</subject><subject>Aluminum</subject><subject>Buffers</subject><subject>Dependence</subject><subject>Domain walls</subject><subject>Domains</subject><subject>Lead zirconate titanates</subject><subject>Materials fatigue</subject><subject>Metal matrix composites</subject><subject>Migration</subject><subject>Nanosheets</subject><subject>Polarization</subject><subject>Recovery</subject><subject>Silicon substrates</subject><subject>Thin films</subject><subject>Zirconium</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kdtKxDAQhosouOhe-AYFb1yhaw5Nm1yKeAJBQb0O0xw0S7dZk6ygT2-0iwqCuckw880_wz9FcYDRHKOGnuB5LVpMW7pVTAhmvKKENNu_4t1iGuMC5VcLjHg9Kcyd7yG4d0jOD2Uwyr-a8Fa6oewN6PLdBeUHSKZMLsEYPOeidf0yltqsfHTJ6DL3DjD4-GxMilW3ttaEnL535RFCeLZf7Fjoo5lu_r3i8eL84eyqurm9vD47valUTXiqmNICdw2jGCznQjHKWkSAMN0xSnDDGkGhpYxxbIXoWoUaZDquWe6BRnR0r7gedbWHhVwFt4TwJj04-ZXw4UlCSE71RjLNqcKItVzxWmPLKXBuWguI1YoSm7UOR61V8C9rE5Nc-HUY8vqS4OwoRVzwTM1GSgUfYzD2eypG8vMoEsvNUTJ7PLJRZTM_Df-GX334AeVK2__gv8ofMveYnA</recordid><startdate>201612</startdate><enddate>201612</enddate><creator>Chopra, Anuj</creator><creator>Bayraktar, Muharrem</creator><creator>Nijland, Maarten</creator><creator>ten Elshof, Johan E.</creator><creator>Bijkerk, Fred</creator><creator>Rijnders, Guus</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-7995-6571</orcidid><orcidid>https://orcid.org/0000-0002-8339-2091</orcidid></search><sort><creationdate>201612</creationdate><title>Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)</title><author>Chopra, Anuj ; Bayraktar, Muharrem ; Nijland, Maarten ; ten Elshof, Johan E. ; Bijkerk, Fred ; Rijnders, Guus</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-5cd91b6531af889c535702a25db532165693a735581f99b7c060eb8d5b65a69b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Alumina</topic><topic>Aluminum</topic><topic>Buffers</topic><topic>Dependence</topic><topic>Domain walls</topic><topic>Domains</topic><topic>Lead zirconate titanates</topic><topic>Materials fatigue</topic><topic>Metal matrix composites</topic><topic>Migration</topic><topic>Nanosheets</topic><topic>Polarization</topic><topic>Recovery</topic><topic>Silicon substrates</topic><topic>Thin films</topic><topic>Zirconium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chopra, Anuj</creatorcontrib><creatorcontrib>Bayraktar, Muharrem</creatorcontrib><creatorcontrib>Nijland, Maarten</creatorcontrib><creatorcontrib>ten Elshof, Johan E.</creatorcontrib><creatorcontrib>Bijkerk, Fred</creatorcontrib><creatorcontrib>Rijnders, Guus</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chopra, Anuj</au><au>Bayraktar, Muharrem</au><au>Nijland, Maarten</au><au>ten Elshof, Johan E.</au><au>Bijkerk, Fred</au><au>Rijnders, Guus</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)</atitle><jtitle>AIP advances</jtitle><date>2016-12</date><risdate>2016</risdate><volume>6</volume><issue>12</issue><spage>125209</spage><epage>125209-6</epage><pages>125209-125209-6</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber–Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ∼97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. 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| subjects | Alumina Aluminum Buffers Dependence Domain walls Domains Lead zirconate titanates Materials fatigue Metal matrix composites Migration Nanosheets Polarization Recovery Silicon substrates Thin films Zirconium |
| title | Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001) |
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