Quasi-ballistic thermal transport in Al0.1Ga0.9N thin film semiconductors

We investigate thermal transport in high-quality Al0.1Ga0.9N thin films grown using plasma-assisted molecular beam epitaxy by time-domain thermoreflectance (TDTR) in the 100 K–500 K temperature range. The apparent thermal conductivity at 300 K and 500 K drops by 30% when the laser modulation frequen...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2016-12, Vol.109 (24)
Hauptverfasser:	Koh, Yee Rui, Shirazi-HD, MohammadAli, Vermeersch, Bjorn, Mohammed, Amr M. S., Shao, Jiayi, Pernot, Gilles, Bahk, Je-Hyeong, Manfra, Michael J., Shakouri, Ali
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Condensed Matter Conduction heating Conductive heat transfer Epitaxial growth Materials Science Molecular beam epitaxy Physics Thermal conductivity Thin films Transport
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!