Quasi-ballistic thermal transport in Al0.1Ga0.9N thin film semiconductors
We investigate thermal transport in high-quality Al0.1Ga0.9N thin films grown using plasma-assisted molecular beam epitaxy by time-domain thermoreflectance (TDTR) in the 100 K–500 K temperature range. The apparent thermal conductivity at 300 K and 500 K drops by 30% when the laser modulation frequen...
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| Veröffentlicht in: | Applied physics letters 2016-12, Vol.109 (24) |
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| container_title | Applied physics letters |
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| creator | Koh, Yee Rui Shirazi-HD, MohammadAli Vermeersch, Bjorn Mohammed, Amr M. S. Shao, Jiayi Pernot, Gilles Bahk, Je-Hyeong Manfra, Michael J. Shakouri, Ali |
| description | We investigate thermal transport in high-quality Al0.1Ga0.9N thin films grown using plasma-assisted molecular beam epitaxy by time-domain thermoreflectance (TDTR) in the 100 K–500 K temperature range. The apparent thermal conductivity at 300 K and 500 K drops by 30% when the laser modulation frequency is increased from 0.8 MHz to 10 MHz. Tempered Lévy analysis of the quasi-ballistic heat conduction reveals superdiffusion exponents α ≈ 1.70 ± 0.06 at room temperature and α ≈ 1.83 ± 0.16 at 500 K. We describe limitations in concurrent extraction of other model parameters and also discuss the impact of boundary scattering in the 100 K–200 K temperature range. |
| doi_str_mv | 10.1063/1.4972186 |
| format | Article |
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We describe limitations in concurrent extraction of other model parameters and also discuss the impact of boundary scattering in the 100 K–200 K temperature range.</description><subject>Applied physics</subject><subject>Condensed Matter</subject><subject>Conduction heating</subject><subject>Conductive heat transfer</subject><subject>Epitaxial growth</subject><subject>Materials Science</subject><subject>Molecular beam epitaxy</subject><subject>Physics</subject><subject>Thermal conductivity</subject><subject>Thin films</subject><subject>Transport</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqdkF1LwzAUhoMoOKcX_oOCVwqdOc1XczmGboOhCHod0rRlGW1Tk3Tgv7djQ7326vC-PDwcXoRuAc8Ac_IIMypFBjk_QxPAQqQEID9HE4wxSblkcImuQtiNkWWETND6bdDBpoVuGhuiNUncVr7VTRK97kLvfExsl8ybUb_UeCZfRmAsatu0Sahaa1xXDiY6H67RRa2bUN2c7hR9PD-9L1bp5nW5Xsw3qSEcYipwIUshSV5SUtSGUaJrKCBnhkItKDGC65JSJikXwKqiZFhwLDQ3sso0pmSK7o_erW5U722r_Zdy2qrVfKMOHQZGOJd4DyN7d2R77z6HKkS1c4PvxvdUBhmwTED2x2i8C8FX9Y8WsDqsqkCdVh3ZhyMbjI06Wtf9D947_wuqvqzJNz94gok</recordid><startdate>20161212</startdate><enddate>20161212</enddate><creator>Koh, Yee Rui</creator><creator>Shirazi-HD, MohammadAli</creator><creator>Vermeersch, Bjorn</creator><creator>Mohammed, Amr M. 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| subjects | Applied physics Condensed Matter Conduction heating Conductive heat transfer Epitaxial growth Materials Science Molecular beam epitaxy Physics Thermal conductivity Thin films Transport |
| title | Quasi-ballistic thermal transport in Al0.1Ga0.9N thin film semiconductors |
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