Tunneling electroresistance effect in ultrathin BiFeO3-based ferroelectric tunneling junctions

Tunneling electroresistance (TER) effect has been observed in high quality ultrathin BiFeO3 thin films. The growth quality of the ultrathin BiFeO3 films was confirmed using the synchrotron high resolution X-ray diffraction techniques as well as high-resolution transmission electron microscopy. Ferro...

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Veröffentlicht in:	Applied physics letters 2016-12, Vol.109 (24)
Hauptverfasser:	Yoong, Herng Yau, Wang, Han, Xiao, Juanxiu, Guo, Rui, Yang, Ping, Yang, Yi, Lim, Sze Ter, Wang, John, Venkatesan, T., Chen, Jingsheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bismuth ferrite Ferroelectric materials Ferroelectricity High resolution Microscopes Potential barriers Thickness Thin films Transmission electron microscopy X-ray diffraction
Online-Zugang:	Volltext
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