Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor

We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidt...

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Veröffentlicht in:Applied physics letters 2015-07, Vol.107 (4)
Hauptverfasser: Alloatti, L., Srinivasan, S. A., Orcutt, J. S., Ram, R. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at −1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4927393