Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance

We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well known Simmons equation for oxide tunneling, where we...

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Veröffentlicht in:	Journal of applied physics 2018-10, Vol.124 (15)
Hauptverfasser:	Ahmed, Sheikh Z., Tan, Yaohua, Truesdell, Daniel S., Calhoun, Benton H., Ghosh, Avik W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Augers Computer simulation Density functional theory Energy consumption Field effect transistors First principles Mathematical analysis Mathematical models Organic chemistry Quantum transport Semiconductor devices Transistors
Online-Zugang:	Volltext
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