Toward GHz Switching in SOI Light Emitting Diodes
In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our finding...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2018-10, Vol.65 (10), p.4413-4420 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4420 |
|---|---|
| container_issue | 10 |
| container_start_page | 4413 |
| container_title | IEEE transactions on electron devices |
| container_volume | 65 |
| creator | Puliyankot, Vidhu Piccolo, Giulia Hueting, Raymond J. E. Schmitz, Jurriaan |
| description | In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that ON-OFF keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency. |
| doi_str_mv | 10.1109/TED.2018.2866517 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_proquest_journals_2117166210</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8457503</ieee_id><sourcerecordid>2117166210</sourcerecordid><originalsourceid>FETCH-LOGICAL-c333t-e1389735ddb641e898ed20056758d4fbc57c89dafc561cae213aa80d81e5128f3</originalsourceid><addsrcrecordid>eNo9kE1rAjEQhkNpoVvbe6GXhZ7XZpLN17GoVWHBg_YcYpLVSN21yYq0v74rSk_DzDzvDDwIPQMeAmD1tpqMhwSDHBLJOQNxgzJgTBSKl_wWZbhfFYpKeo8eUtr1LS9LkiFYtScTXT6d_ebLU-jsNjSbPDT5cjHPq7DZdvlkH7ruPB2H1vn0iO5q85X807UO0OfHZDWaFdViOh-9V4WllHaFByqVoMy5NS_BSyW9IxgzLph0Zb22TFipnKkt42CNJ0CNkdhJ8AyIrOkAvV7uHmL7ffSp07v2GJv-pSYAAjgngHsKXygb25Sir_Uhhr2JPxqwPovRvRh9FqOvYvrIyyUSvPf_uCyZYJjSP85VXDk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2117166210</pqid></control><display><type>article</type><title>Toward GHz Switching in SOI Light Emitting Diodes</title><source>IEEE Electronic Library (IEL)</source><creator>Puliyankot, Vidhu ; Piccolo, Giulia ; Hueting, Raymond J. E. ; Schmitz, Jurriaan</creator><creatorcontrib>Puliyankot, Vidhu ; Piccolo, Giulia ; Hueting, Raymond J. E. ; Schmitz, Jurriaan</creatorcontrib><description>In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that ON-OFF keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2018.2866517</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Dependence ; Design optimization ; Emissions control ; Light emission ; Light emitting diodes ; Light-emitting diodes (LEDs) ; modeling ; On-Off Keying ; Optical switches ; Organic light emitting diodes ; P-i-n diodes ; Photonics ; quantum efficiency ; Silicon ; silicon photonics ; Silicon-on-insulator ; simulation ; SOI (semiconductors) ; Switching</subject><ispartof>IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4413-4420</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-e1389735ddb641e898ed20056758d4fbc57c89dafc561cae213aa80d81e5128f3</citedby><cites>FETCH-LOGICAL-c333t-e1389735ddb641e898ed20056758d4fbc57c89dafc561cae213aa80d81e5128f3</cites><orcidid>0000-0002-9677-825X ; 0000-0002-0773-8978</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8457503$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids></links><search><creatorcontrib>Puliyankot, Vidhu</creatorcontrib><creatorcontrib>Piccolo, Giulia</creatorcontrib><creatorcontrib>Hueting, Raymond J. E.</creatorcontrib><creatorcontrib>Schmitz, Jurriaan</creatorcontrib><title>Toward GHz Switching in SOI Light Emitting Diodes</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that ON-OFF keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.</description><subject>Dependence</subject><subject>Design optimization</subject><subject>Emissions control</subject><subject>Light emission</subject><subject>Light emitting diodes</subject><subject>Light-emitting diodes (LEDs)</subject><subject>modeling</subject><subject>On-Off Keying</subject><subject>Optical switches</subject><subject>Organic light emitting diodes</subject><subject>P-i-n diodes</subject><subject>Photonics</subject><subject>quantum efficiency</subject><subject>Silicon</subject><subject>silicon photonics</subject><subject>Silicon-on-insulator</subject><subject>simulation</subject><subject>SOI (semiconductors)</subject><subject>Switching</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNo9kE1rAjEQhkNpoVvbe6GXhZ7XZpLN17GoVWHBg_YcYpLVSN21yYq0v74rSk_DzDzvDDwIPQMeAmD1tpqMhwSDHBLJOQNxgzJgTBSKl_wWZbhfFYpKeo8eUtr1LS9LkiFYtScTXT6d_ebLU-jsNjSbPDT5cjHPq7DZdvlkH7ruPB2H1vn0iO5q85X807UO0OfHZDWaFdViOh-9V4WllHaFByqVoMy5NS_BSyW9IxgzLph0Zb22TFipnKkt42CNJ0CNkdhJ8AyIrOkAvV7uHmL7ffSp07v2GJv-pSYAAjgngHsKXygb25Sir_Uhhr2JPxqwPovRvRh9FqOvYvrIyyUSvPf_uCyZYJjSP85VXDk</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>Puliyankot, Vidhu</creator><creator>Piccolo, Giulia</creator><creator>Hueting, Raymond J. E.</creator><creator>Schmitz, Jurriaan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9677-825X</orcidid><orcidid>https://orcid.org/0000-0002-0773-8978</orcidid></search><sort><creationdate>20181001</creationdate><title>Toward GHz Switching in SOI Light Emitting Diodes</title><author>Puliyankot, Vidhu ; Piccolo, Giulia ; Hueting, Raymond J. E. ; Schmitz, Jurriaan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-e1389735ddb641e898ed20056758d4fbc57c89dafc561cae213aa80d81e5128f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Dependence</topic><topic>Design optimization</topic><topic>Emissions control</topic><topic>Light emission</topic><topic>Light emitting diodes</topic><topic>Light-emitting diodes (LEDs)</topic><topic>modeling</topic><topic>On-Off Keying</topic><topic>Optical switches</topic><topic>Organic light emitting diodes</topic><topic>P-i-n diodes</topic><topic>Photonics</topic><topic>quantum efficiency</topic><topic>Silicon</topic><topic>silicon photonics</topic><topic>Silicon-on-insulator</topic><topic>simulation</topic><topic>SOI (semiconductors)</topic><topic>Switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Puliyankot, Vidhu</creatorcontrib><creatorcontrib>Piccolo, Giulia</creatorcontrib><creatorcontrib>Hueting, Raymond J. E.</creatorcontrib><creatorcontrib>Schmitz, Jurriaan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Puliyankot, Vidhu</au><au>Piccolo, Giulia</au><au>Hueting, Raymond J. E.</au><au>Schmitz, Jurriaan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Toward GHz Switching in SOI Light Emitting Diodes</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2018-10-01</date><risdate>2018</risdate><volume>65</volume><issue>10</issue><spage>4413</spage><epage>4420</epage><pages>4413-4420</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that ON-OFF keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2018.2866517</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-9677-825X</orcidid><orcidid>https://orcid.org/0000-0002-0773-8978</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4413-4420 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_journals_2117166210 |
| source | IEEE Electronic Library (IEL) |
| subjects | Dependence Design optimization Emissions control Light emission Light emitting diodes Light-emitting diodes (LEDs) modeling On-Off Keying Optical switches Organic light emitting diodes P-i-n diodes Photonics quantum efficiency Silicon silicon photonics Silicon-on-insulator simulation SOI (semiconductors) Switching |
| title | Toward GHz Switching in SOI Light Emitting Diodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T00%3A44%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Toward%20GHz%20Switching%20in%20SOI%20Light%20Emitting%20Diodes&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Puliyankot,%20Vidhu&rft.date=2018-10-01&rft.volume=65&rft.issue=10&rft.spage=4413&rft.epage=4420&rft.pages=4413-4420&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2018.2866517&rft_dat=%3Cproquest_ieee_%3E2117166210%3C/proquest_ieee_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2117166210&rft_id=info:pmid/&rft_ieee_id=8457503&rfr_iscdi=true |