Dopingless Tunnel Field-Effect Transistor With Oversized Back Gate: Proposal and Investigation

Tunnel field-effect transistors (TFETs) have shown attractive device performance making them a potential candidate to replace MOSFETs in future technologies. However, the inherent ambipolar characteristic of TFETs poses challenge in digital applications. The gate-drain overlap in conventional TFETs...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-10, Vol.65 (10), p.4701-4708
Hauptverfasser:	Raushan, Mohd Adil, Alam, Naushad, siddiqui, Mohammad Jawaid
Format:	Artikel
Sprache:	eng
Schlagworte:	Ambipolarity Bending machines charge plasma Conductivity dopingless Electrodes Field effect transistors Logic gates Misalignment MOSFETs oversized back gate (OBG) Performance evaluation Semiconductor devices TFETs tunnel field-effect transistors (TFETs) Tunneling
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